ENHANCED CARRIER DENSITIES AND DEVICE PERFORMANCE IN PIEZOELECTRIC PSEUDOMORPHIC HIGH-ELECTRON MOBILITY TRANSISTOR STRUCTURES by Sanchezdehesa, J, Sanchezrojas, J, Lopez, C, Nicholas, R

THE Q/U IMAGING EXPERIMENT INSTRUMENT by Bischoff, C, Brizius, A, Buder, I, Chinone, Y, Cleary, K, Dumoulin, R, Kusaka, A, Monsalve, R, Naess, S, Newburgh, L, Nixon, G, Reeves, R, Smith, K, Vanderlinde, K, Wehus, I, Bogdan, M, Bustos, R, Church, SE, Davis, R, Dickinson, C, Eriksen, H, Gaier, T, Gundersen, J, Hasegawa, M, Hazumi, M

“…The polarimeters that form the focal planes use a compact design based on high electron mobility transistors (HEMTs) that provides simultaneous measurements of the Stokes parameters Q, U, and I in a single module. …”

The Q/U imaging experiment instrument by QUIET Collaboration, Bischoff, C, Brizius, A, Buder, I, Chinone, Y, Cleary, K, Dumoulin, RN, Kusaka, A, Monsalve, R, Naess, SK, Newburgh, LB, Nixon, G, Reeves, R, Smith, KM, Vanderlinde, K, Wehus, IK, Bogdan, M, Bustos, R, Church, SE, Davis, R, Dickinson, C, Eriksen, HK, Gaier, T, Gundersen, JO, Hasegawa, M, Hazumi, M, Holler, C, Huffenberger, KM, Imbriale, WA, Ishidoshiro, K, Jones, ME, Kangaslahti, P, Kapner, DJ, Lawrence, CR, Leitch, EM, Limon, M, McMahon, JJ, Miller, AD, Nagai, M, Nguyen, H, Pearson, TJ, Piccirillo, L, Radford, SJE, Readhead, ACS, Richards, JL, Samtleben, D, Seiffert, M, Shepherd, MC, Staggs, ST, Tajima, O, Thompson, KL, Williamson, R, Winstein, B, Wollack, EJ, Zwart, JTL

“…The polarimeters that form the focal planes use a compact design based on high electron mobility transistors (HEMTs) that provides simultaneous measurements of the Stokes parameters Q, U, and I in a single module. …”

Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin fi... by Wilkinson, A, Vilalta-Clemente, A, Naresh-Kumar, G, Nouf-Allehiani, M, Gamarra, P, di Forte-Poisson, M, Trager-Cowan, C

“…In the present work, we report the application of the cross-correlation based HR-EBSD approach to determine the tilt, twist, elastic strain and the distribution and type of threading dislocations in InAlN/AlN/GaN high electron mobility transistors (HEMTs) structures grown on two different substrates, namely SiC and sapphire. …”