Study of the electrical properties of radiation hard devices based on III-V materials by Hasbullah, Nurul Fadzlin, Alam, A. H. M. Zahirul

“…Most electronic devices nowadays are fabricated using semiconductor materials. GaAs is preferred over silicon to produce devices due to it being more resistant to defects due to radiation. …”
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Mechanism and control of current transport in GaN and AlGaN schottky barriers for chemical sensor applications by Qindeel, Rabia, Hashim, Abdul Manaf, Abdl Rahman, Abdul Rahim, Abd Rahman, Shaharin Fadzli, Zainal Abidin, Mastura Shafinaz

“…Detecting ion concentrations by semiconductor devices has stimulated a developing field in semiconductor-based ion sensors. Many semiconductor materials have been tested for their suitability as ion sensors; especially there is an emerging interest in the use of wide band gap semiconductors as sensitive chemical sensors. …”
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Comparison of the effects of substrate temperature and 2% molecular hydrogen annealing on the optical GAP OF a-Ge thin films . by K., G. Saw

“…Efforts are being directed towards using microcrystalline tetrahedral semiconductor material for better efficiency in thin film solar cells. 1 Since microcrystallinity is associated with increasing deposition temperature and annealing temperature, the effect of both these temperatures on the optical bandgap would be interesting to be compared.…”
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High Resistivity Silicon- Deep-Level Doping Compensation Using Elemental Gold by Lew, Yit Shien

“…The traditional method of using III-V semiconductor material for the substrate is associated with the problem of fabrication cost and complexity. …”
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