Showing 1 - 20 results of 72 for search '"high-electron-mobility transistor"', query time: 0.09s Refine Results
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    Growth and characterization of metamorphic layer structures for high electron mobility transistors by Yuan, Kaihua.

    Published 2008
    “…InP-based high electron mobility transistors (HEMTs) have demonstrated superior high frequency and low noise performance. …”
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    Thesis
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    Fabrication of InGaP high electron mobility transistors by electron beam technique by Gay, Boon Ping.

    Published 2008
    “…Recently, there has been great interest in the development of the InxGa|.xP material system as an alternative to AlyGai_yAs, for applications, such as in high electron mobility transistors, heterojunction bipolar transistors and diode lasers. …”
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    Thesis
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    Development and characterization of GaN high electron mobility transistors for low noise applications by Liu, Zhihong

    Published 2011
    “…This thesis presents the fabrication, detailed characterization and analysis of AlGaN/GaN high electron mobility transistors (HEMTs) and metal-insulator-semiconductor HEMTs (MISHEMTs) for microwave low-noise applications. …”
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    Thesis
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    Fabrication and characterization of AlGaAs/GaAs pseudomorphic high electron mobility transistors for power applications by Tan, Chee Leong

    Published 2008
    “…A robust process technology using optical and electron beam lithography has been developed for 0.25 µm gate length AlGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs). These devices, for power applications at microwave frequencies, demonstrated a high gate-drain breakdown voltage and a high drain current. …”
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    Thesis
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    Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE by Yip, Kim Hong.

    Published 2008
    “…This thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs and AlyGa1-yAs/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor (pHEMT) grown by solid source molecular beam epitaxy (SSMBE).…”
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    Thesis
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    Studies of traps in AlGaN/GaN high electron mobility transistors on silicon by Anand Mulagumoottil Jesudas

    Published 2016
    “…AlGaN/GaN-based high-electron-mobility transistors (HEMTs) are promising for high-voltage, high-frequency and high-power applications such as DC-DC convertors, cellular base stations, radar and wireless communication systems. …”
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    Thesis
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    Study of GaN-based double heterostructure high electron mobility transistor (DH-HEMT) by Seah, Alex Tian Long

    Published 2018
    “…For higher frequency operation, the device such as high electron mobility transistor (HEMT) needs to be scaled down by reducing the gate length. …”
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    Thesis
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