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Degradation mechanisms of GaN high electron mobility transistors
Published 2007Get full text
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2
Two-dimensional simulation and design of high electron mobility transistors
Published 2008Get full text
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3
Electric field engineering in GaN high electron mobility transistors
Published 2008Get full text
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4
Reliability of GaN high electron mobility transistors on silicon substrates
Published 2010Get full text
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5
Physics of electrical degradation in GaN high electron mobility transistors
Published 2010Get full text
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6
Growth and characterization of metamorphic layer structures for high electron mobility transistors
Published 2008“…InP-based high electron mobility transistors (HEMTs) have demonstrated superior high frequency and low noise performance. …”
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7
Deeply-scaled GaN high electron mobility transistors for RF applications
Published 2014Get full text
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8
Reliability of W-Band InAIN/GaN High Electron Mobility Transistors
Published 2017Get full text
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9
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Limiting physics of mm-wave InP power high electron mobility transistors
Published 2005Get full text
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13
Fabrication of InGaP high electron mobility transistors by electron beam technique
Published 2008“…Recently, there has been great interest in the development of the InxGa|.xP material system as an alternative to AlyGai_yAs, for applications, such as in high electron mobility transistors, heterojunction bipolar transistors and diode lasers. …”
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14
Development and characterization of GaN high electron mobility transistors for low noise applications
Published 2011“…This thesis presents the fabrication, detailed characterization and analysis of AlGaN/GaN high electron mobility transistors (HEMTs) and metal-insulator-semiconductor HEMTs (MISHEMTs) for microwave low-noise applications. …”
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15
Fabrication and characterization of AlGaAs/GaAs pseudomorphic high electron mobility transistors for power applications
Published 2008“…A robust process technology using optical and electron beam lithography has been developed for 0.25 µm gate length AlGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs). These devices, for power applications at microwave frequencies, demonstrated a high gate-drain breakdown voltage and a high drain current. …”
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16
Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE
Published 2008“…This thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs and AlyGa1-yAs/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor (pHEMT) grown by solid source molecular beam epitaxy (SSMBE).…”
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17
Studies of traps in AlGaN/GaN high electron mobility transistors on silicon
Published 2016“…AlGaN/GaN-based high-electron-mobility transistors (HEMTs) are promising for high-voltage, high-frequency and high-power applications such as DC-DC convertors, cellular base stations, radar and wireless communication systems. …”
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18
Study of GaN-based double heterostructure high electron mobility transistor (DH-HEMT)
Published 2018“…For higher frequency operation, the device such as high electron mobility transistor (HEMT) needs to be scaled down by reducing the gate length. …”
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