Determination of carrier lifetime in power semiconductor devices by Goh, Chee Hiong.

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Development of Power Semiconductor Devices Database for Knowledge-Based Systems by Shaheen, Ghassan Mohammed

“…Since 1970, various types of power semiconductor devices have been developed and become commercially available. …”
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Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes by Kumta Amit Sudhakar

“…In recent times, 4H-SiC has been at the center of power semiconductor device research due to its superior material properties such as large bandgap (Eg ~3.26 eV), high breakdown electric field (Ec ~3 MV/cm which is almost 10 times that of Si), high saturated electron velocity (~2.0×107 cm/s which is almost 2 times that in Si), high thermal conductivity (K ~4.9 W/cm.K) and most importantly ability to form a stable native oxide SiO2. …”
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Development of short circuit detection and protection test for three-phase inverter by Goyle, Vakul

“…This also further increases and enhances the reliability of such systems. Power semiconductor devices such as IGBT’s have become an important component and the failure of these devices can cause catastrophic failure of the entire system. …”
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Voltage tracking of a DC-DC buck-boost converter using gaussian fuzzy logic control by Omar, Gadaffi

“…DC-DC converter usually consists of power semiconductor devices which are operated as electronic switches. …”
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Development of an AC-DC boost power factor correction by Md Tahir, Zuraidi

“…With rapid development in power semiconductor devices, the usage of power electronic systems has expanded to new and wide application range that include residential, commercial, aerospace and many others. …”
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Thermal modelling of power semiconductor modules in power electronic applications by Choudhury, K

“…It provides the placement of power semiconductor devices. One of the most important design constraints of power module is maximum junction temperature of semiconductor devices. …”

Digital active gate drives to increase power semiconductor performance by Jones, GT

“…<p>Active Gate Drives (AGDs) tailor the signal applied to the gates of power metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs) to improve the switching behaviour of these power semiconductor devices. The AGDs can slow down the transition when switching between the off and on states (and vice-versa) to reduce peak transient voltages and electromagnetic interference (EMI). …”

Investigation and implementation of multilevel power converters for low/medium/high power applications by Ooi, Gabriel Heo Peng

“…This approach reduces the number of power semiconductor devices with distributed voltage sources in a single dc bus configuration. …”
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