Study on characterization and parameter extraction techniques for GaN high electron mobility transistors by Cui, Pengju

“…In recent decades, environmental concerns and rising energy costs have brought to light the critical need for sophisticated power electronics and RF communication systems. GaN, a semiconductor material with a broad bandgap, is renowned for its exceptional physical characteristics, which render it exceptionally well-suited for applications involving high power and frequency. …”
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Simulation and optimization of silicon carbide metal oxide semiconductor field effect transistors by Zhu,Taolue

“…Therefore, there is an intense interest in the study of SiC VDMOS device as it combines the best device design with the attractive semiconductor material properties of SiC. In this dissertation, Silvaco, which is a widely used semiconductor device simulation software, is used to simulate the device characteristics of SiC VDMOS power devices. …”
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