Modelling and mitigating oscillation in E-mode GaN HEMT: A simulation-based approach to parasitic inductance optimization by Liu, Xinzhi, Shafie, Suhaidi, Radzi, Mohd Amran Mohd, Azis, Norhafiz, Karim, Abdul Hafiz Abdul

“…This research delves into the intricacies of the Enhancement mode Gallium Nitride High Electron Mobility Transistor (E-mode GaN HEMT). A focus is placed on its static characterization, parameter analysis, and the influence of external parasitic inductances, particularly regarding oscillation challenges during its hard switching process. …”