ENHANCED CARRIER DENSITIES AND DEVICE PERFORMANCE IN PIEZOELECTRIC PSEUDOMORPHIC HIGH-ELECTRON MOBILITY TRANSISTOR STRUCTURES by Sanchezdehesa, J, Sanchezrojas, J, Lopez, C, Nicholas, R

Design of high compression point josephson junction travelling wave parametric amplifiers for readout of millimetre and sub-millimetre astronomical receivers by Navarro Montilla, J, Tan, BK

“…We then compare the SIS receiver noise performance utilising these JTWPAs with that of using a conventional high gain High Electron Mobility Transistor (HEMT) amplifier. We show that we can improve the receiver sensitivity significantly by either cascading two 23 dB gain JTWPA or using a combination of a 16 dB gain JTWPA and a HEMT amplifier. …”

Development of superconducting thin film travelling wave parametric amplifiers by Longden, JC

“…They have been experimentally verified to achieve high gain over broad bandwidth and quantum-limited noise performance with negligible heat dissipation, making them a natural successor to the current generation of semiconductor-based high electron mobility transistor (HEMT) amplifiers, which are the current standard in low-noise amplification. …”

Fast switching of high current WBG power devices by Shelton, E, Ristic-Smith, A, Bruford, J, Rogers, D, Carter, J, Louco, L, Beadman, M, Palmer, P

“…Wide-band-gap power devices, such as Gallium Nitride High Electron Mobility Transistors and Silicon Carbide Field-effect Transistors, offer impressively fast switching performance compared to their traditional Silicon counterparts. …”

THE Q/U IMAGING EXPERIMENT INSTRUMENT by Bischoff, C, Brizius, A, Buder, I, Chinone, Y, Cleary, K, Dumoulin, R, Kusaka, A, Monsalve, R, Naess, S, Newburgh, L, Nixon, G, Reeves, R, Smith, K, Vanderlinde, K, Wehus, I, Bogdan, M, Bustos, R, Church, SE, Davis, R, Dickinson, C, Eriksen, H, Gaier, T, Gundersen, J, Hasegawa, M, Hazumi, M

“…The polarimeters that form the focal planes use a compact design based on high electron mobility transistors (HEMTs) that provides simultaneous measurements of the Stokes parameters Q, U, and I in a single module. …”

The Q/U imaging experiment instrument by QUIET Collaboration, Bischoff, C, Brizius, A, Buder, I, Chinone, Y, Cleary, K, Dumoulin, RN, Kusaka, A, Monsalve, R, Naess, SK, Newburgh, LB, Nixon, G, Reeves, R, Smith, KM, Vanderlinde, K, Wehus, IK, Bogdan, M, Bustos, R, Church, SE, Davis, R, Dickinson, C, Eriksen, HK, Gaier, T, Gundersen, JO, Hasegawa, M, Hazumi, M, Holler, C, Huffenberger, KM, Imbriale, WA, Ishidoshiro, K, Jones, ME, Kangaslahti, P, Kapner, DJ, Lawrence, CR, Leitch, EM, Limon, M, McMahon, JJ, Miller, AD, Nagai, M, Nguyen, H, Pearson, TJ, Piccirillo, L, Radford, SJE, Readhead, ACS, Richards, JL, Samtleben, D, Seiffert, M, Shepherd, MC, Staggs, ST, Tajima, O, Thompson, KL, Williamson, R, Winstein, B, Wollack, EJ, Zwart, JTL

“…The polarimeters that form the focal planes use a compact design based on high electron mobility transistors (HEMTs) that provides simultaneous measurements of the Stokes parameters Q, U, and I in a single module. …”

Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin fi... by Wilkinson, A, Vilalta-Clemente, A, Naresh-Kumar, G, Nouf-Allehiani, M, Gamarra, P, di Forte-Poisson, M, Trager-Cowan, C

“…In the present work, we report the application of the cross-correlation based HR-EBSD approach to determine the tilt, twist, elastic strain and the distribution and type of threading dislocations in InAlN/AlN/GaN high electron mobility transistors (HEMTs) structures grown on two different substrates, namely SiC and sapphire. …”