Gallium nitride high electron mobility transistor with an effective graphene-based heat removal system by V. S. Volcheck, I. Yu. Lovshenko, V. T. Shandarovich, Dao Dinh Ha

“…The subject of the research is the electrical, frequency and thermal characteristics of the gallium nitride high-electron mobility transistor with a graphene-based heat removal system. …”
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Numerical simulation of the sensor for toxic nanoparticles based on the heterostructure field effect transistor by V. S. Volcheck, V. R. Stempitsky

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Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron... by A. D. Yunik, A. H. Shydlouski

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AMMONIA MOLECULAR BEAM EPITAXY OF AlGaN HETEROSTRUCTURES ON SAPPHIRE SUBSTRATES by M. V. Rzheutski, Ja. A. Solovjov, A. G. Vainilovich, I. Ya. Svitsiankou, A. N. Pyatlitski, D. V. Zhyhulin, E. V. Lutsenko

“…The determined optimal epitaxy conditions for AlN and AlGaN layers were used to grow the AlGaN/GaN high electron mobility transistor structure on a sapphire substrate with two-dimensional electron gas, which had a mobility of 1950 cm2/(Vs) at a concentration of 1.15×1013 cm-2. …”
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