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Database on properties and technical characteristics of semiconductor materials
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MATHEMATICAL MODELING OF THERMAL PROCESSES IN THE THERMOELECTRIC SEMICONDUCTOR DEVICES WITH A PULSE POWER
Published 2016-07-01“…In this paper the mathematical model of the mode switch mode power supply thermoelectric devices, which takes into account the processes elektroteplofizicheskie branches semiconductor materials and allowing to increase the efficiency of heat transfer.…”
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Metal-semiconductor phase transition in nanoheteroepitaxial structures technology
Published 2019-05-01“…The main aim of the study is to identify the reasons of forming wide-receiving semiconductor material of narrow-gap one when growing it in the form of quantum dots; to investigate the possibility of applying metal-semiconductor phase transition to obtain the material which in the form of quantum dots corresponds to narrow-gap semiconductor. …”
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Metal-semiconductor phase transition in nanoheteroepitaxial structures technology
Published 2019-05-01“…The main aim of the study is to identify the reasons of forming wide-receiving semiconductor material of narrow-gap one when growing it in the form of quantum dots; to investigate the possibility of applying metal-semiconductor phase transition to obtain the material which in the form of quantum dots corresponds to narrow-gap semiconductor. …”
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Influence of Cd<sub>х</sub>Hg<sub>1-х</sub>Te epitaxial layers defects on photo-electric parameters of matrix detector devices
Published 2013-12-01“…In spite of the fact that solid solution CdxHg1-xTe is the most sensitive and effective semiconductor material for matrix photodetectors, weak internuclear connection Hg–Cd and high energy диссоциации molecules Tе2 result in formation CdxHg1-xTe epitaxial layers defects in process MBE epitaxial growth of layers which negatively influence on matrix detector device work. …”
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