Total ionizing dose effect of enhanced AlGaN/GaN HEMT devices under different bias by QIU Yiwu, GUO Fengqi, YIN Yanan, ZHANG Pingwei, ZHOU Xinjie

“…BackgroundGallium nitride (GaN) power devices have garnered attention in the anti-irradiation field owing to their excellent performance.PurposeThis study aims to explore the anti-γ-ray damage ability of gallium nitride power devices and clarify the mechanism of radiation degradation.MethodsFirstly, the domestically produced commercial NP20G65D6 P-GaN gate enhanced AlGaN/GaN High Electron Mobility Transistor (HEMT) device was taken as test sample. …”
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