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    Properties of <i>Z</i><sub>1</sub> and <i>Z</i><sub>2</sub> Deep-Level Defects in <i>n</i>-Type Epitaxial and High-Purity Semi-Insulating 4<i>H</i>-SiC

    Properties of <i>Z</i><sub>1</sub> and <i>Z</i><sub>2</sub> Deep-Level Defects in <i>n</i>-Type Epitaxial and High-Purity Semi-Insulating 4<i>H</i>-SiC per Paweł Kamiński, Roman Kozłowski, Jarosław Żelazko, Kinga Kościewicz, Tymoteusz Ciuk

    Publicat 2024-06-01
    Matèries: “…<i>Z</i><sub>1</sub> and <i>Z</i><sub>2</sub> defects…”
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