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    Properties of <i>Z</i><sub>1</sub> and <i>Z</i><sub>2</sub> Deep-Level Defects in <i>n</i>-Type Epitaxial and High-Purity Semi-Insulating 4<i>H</i>-SiC

    Properties of <i>Z</i><sub>1</sub> and <i>Z</i><sub>2</sub> Deep-Level Defects in <i>n</i>-Type Epitaxial and High-Purity Semi-Insulating 4<i>H</i>-SiC af Paweł Kamiński, Roman Kozłowski, Jarosław Żelazko, Kinga Kościewicz, Tymoteusz Ciuk

    Udgivet 2024-06-01
    Fag: “...<i>Z</i><sub>1</sub> and <i>Z</i><sub>2</sub> defects...”
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