Properties of <i>Z</i>₁ and <i>Z</i>₂ Deep-Level Defects in <i>n</i>-Type Epitaxial and High-Purity Semi-Insulating 4<i>H</i>-SiC von Paweł Kamiński, Roman Kozłowski, Jarosław Żelazko, Kinga Kościewicz, Tymoteusz Ciuk

Schlagworte: “… <i>Z</i>₁ and <i>Z</i>₂ defects …”
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