GaN-based materials and devices : growth, fabrication, characterization and performance / by Shur, M. S., Davis, R. F.

Subjects: “…Gallium nitride…”

A pH sensor using Gallium Nitide based semiconductor with gateless field effect transistor type structure / by Mastura Shafinaz Zainal Abidin, 1986-, Abdul Manaf Hashim, Fakulti Kejuruteraan Elektrik

Subjects: “…Gallium nitride…”

A pH sensor using Gallium Nitide based semiconductor with gateless field effect transistor type structure [electronic resource] / by Mastura Shafinaz Zainal Abidin, 1986-, Fakulti Kejuruteraan Elektrik

Subjects: “…Gallium nitride…”

III-nitride devices and nanoengineering / by Feng, Zhe Chuan

Subjects:

Growth of gallium nitride pine tree-like nanostructures by Tjahjana, Liliana, Saleem, Umar, Muhammad Danang Birowosuto, Wang, Hong

Subjects: Get full text
Get full text
Get full text

Porous silicon carbide and gallium nitride : epitaxy, catalysis, and biotechnology applications / by 462373 Feenstra, Randall M., Wood, Colin E. C.

Subjects:

Fabrication and characterization of an undoped-AlGaN/GaN HEMT circular schottky diode for hydrogen sensing / by Mohamad Nizam Sulaiman, 1987-, Abdul Manaf Hashim, Fakulti Kejuruteraan Elektrik

Subjects:

Fabrication and characterization of an undoped-AlGaN/GaN HEMT circular schottky diode for hydrogen sensing [electronic resource] / by Mohamad Nizam Sulaiman, 1987-

Subjects:

Fabrication and characterization of gallium nitride-based gateless field-effect -transistor for liquid sensing / by 521333 Wang, Soo Jeat, Abdul Manaf Hashim, Fakulti Kejuruteraan Elektrik

Subjects:

Fabrication and characterization of gallium nitride-based gateless field-effect -transistor for liquid sensing [electronic resource] / by 521333 Wang, Soo Jeat

Subjects:

Introduction to nitride semiconductor blue lasers and light emitting diodes / by Nakamura, Shuji, 1954-, Chichibu, Shigesfusa F., 1963-

Subjects:

Experimental demonstration of a two-dimensional hole gas in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy by Méchin, Loïc, Médard, François, Leymarie, Joël, Bouchoule, Sophie, Duboz, Jean-Yves, Alloing, Blandine, Zuñiga-Pérez, Jesús, Disseix, Pierre

Subjects: Get full text

A novel 2.6–6.4 GHz highly integrated broadband GaN power amplifier by Liu, Bei, Mao, Mengda, Khanna, Devrishi, Boon, Chirn-Chye, Choi, Pilsoon, Fitzgerald, Eugene A.

Subjects: Get full text
Get full text

Antireflective GaN nanoridge texturing by metal-assisted chemical etching via a thermally dewetted Pt catalyst network for highly responsive ultraviolet photodiodes by Liao, Yikai, Kim, You Jin, Lai, Junyu, Seo, Jung-Hun, Kim, Munho

Subjects: Get full text

p-GaN/n-IGZO self-powered ultraviolet photodetector with ultralow dark current and high sensitivity by Liao, Yikai, Kim, You Jin, Kim, Munho

Subjects: Get full text

Growth instability of N-polar GaN on vicinal SiC substrate using plasma-assisted molecular beam epitaxy by Huo, Lili, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K.

Subjects: Get full text

Characterization of ZnO Nanorods Grown on GaN Using Aqueous Solution Method by Quang, Hong Le, Chua, Soo-Jin, Loh, Kian Ping, Chen, Zhen, Thompson, Carl V., Fitzgerald, Eugene A.

Subjects: Get full text

Fabrication and I-V Characterization of ZnO Nanorod Based Metal-Insulator-Semiconductor Junction by Quang, Le Hong, Chua, Soo-Jin, Fitzgerald, Eugene A.

Subjects: “…Gallium Nitride…”
Get full text

Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices by Qian, Haisheng, Hu, Guangxi, Hu, Laigui, Zhou, Xing, Liu, Ran, Zheng, Lirong

Subjects: Get full text

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures by Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Ranjan, A., Seah, Alex Tian Long, Huo, Lili

Subjects: Get full text