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Properties of <i>Z</i><sub>1</sub> and <i>Z</i><sub>2</sub> Deep-Level Defects in <i>n</i>-Type Epitaxial and High-Purity Semi-Insulating 4<i>H</i>-SiC
Pubblicazione 2024-06-01Soggetti: “...<i>Z</i><sub>1</sub> and <i>Z</i><sub>2</sub> defects...”
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