Studies on plasma assisted molecular beam epitaxial growth of GaN-based multilayer heterostructures on Si for photodetector application by Zheng, Yi

“…AlN layer failed to block Ga diffusion because of columnar structure or grain boundary formed, due to N-rich AlN growth in MBE, which could act as a path for Ga diffusion into Si substrate and dissolve in Si forming Ga-Si alloy. …”
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Pnictogen-halide semiconductors for photovoltaics by Liu, P

“…The Reinforcement Learning (RL) algorithm was able to identify processing parameters that gave pinhole free morphology, but more data on continuous variables could potentially lead to extrapolation of parameters that lead to better thin films with larger grain sizes. The Random Forest (RF) algorithm extrapolated parameters that were unable to be reliably reproduced experimentally due to the model not accounting for batch-to-batch variation in the data supplier. …”

Studies on GaN based HEMT heterostructures on 100-mm silicon grown by molecular beam epitaxy by Ravikiran Lingaparthi

“…AlN/GaN SMLs stack was successful in achieving compressive stress, lower pit density, larger grain sizes and lower TDD in the GaN buffer compared to AlGaN SML. …”
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