Dilute antimonide nitride for long wavelength infrared photodetection by Chen, X. Z., Jin, Y. J., Zhang, D. H.

“…InSb1−xNx materials were fabricated by direct nitrogen implantation into InSb wafer and they are characterized by X-ray diffraction, Hall measurement, X-ray photoelectron spectroscopy. …”
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A parallel dipole line system by Gunawan, Oki, Virgus, Yudistira, Tai, Kong Fai

“…The system serves as a trap for cylindrical diamagnetic object, produces a fascinating one-dimensional camelback potential profile at its center plane, yields a technique for measuring magnetic susceptibility of the trapped object and serves as an ideal system to implement highly sensitive Hall measurement utilizing rotating magnetic field and lock-in detection. …”
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Microstructure tailoring in hot-pressed silicon carbide by Lee, Yan Xi.

“…The hardness of the samples with the ABC system also showed the Hall-Petch relationship when the hardness was plotted against the inverse root of the average length of grains. …”
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Acoustic valley edge states in a graphene-like resonator system by Yang, Yahui, Yang, Zhaoju, Zhang, Baile

“…It demonstrates the quantum valley Hall topological phase for sound waves. Similar to a gapped graphene, gapless topological valley edge states can be found at a zigzag domain wall separating different domains with opposite valley Chern numbers, while an armchair domain wall hosts no gapless edge states. …”
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Replacement of Artemia with Moina micrura in the rearing of freshwater shrimp larvae by Alam, M.J., Ang, K.J., Begum, M.

“…However, the ingestion of Moina increased from stage vi-vii onwards. © 1995 Chapman & Hall.…”
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Point defect–dislocation interactions in BEOL-compatible Ge-on-Si epitaxy by Postelnicu, Eveline, Wen, Rui-Tao, Ma, Danhao, Wang, Baoming, Wada, Kazumi, Michel, Jurgen, Kimerling, Lionel C

“…Undoped LT Ge exhibits p-type conductivity initially and n-type conductivity conversion upon annealing. Hall effect measurements following post growth heat treatment between 400 and 600 °C reveal an acceptor removal reaction that follows first-order kinetics with an activation energy of 1.7 ± 0.5 eV and a pre-exponential factor of 2.3×107 s−1 consistent with a point defect, diffusion limited process. …”
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Microstructure evolution and mechanical property response via 3D printing parameter development of Al–Sc alloy by Kuo, C. N., Chua, Chee Kai, Peng, P. C., Chen, Y. W., Sing, Swee Leong, Huang, Sheng, Su, Y. L.

“…According to the stress concentration effect and Hall–Petch effect, the mechanical properties of the 3D printed materials vary greatly depending on the difference in defect size, shape and grain size.…”
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Additive friction stir processing by Lin, Longyi

“…The improvement in tensile strengths due to finer grains through the Hall-Petch mechanism was insufficient to compensate for the drop in Orowan strengthening. …”
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Antiferromagnetic half-skyrmions and bimerons at room temperature by Jani, H, Lin, J-C, Chen, J, Harrison, J, Maccherozzi, F, Schad, J, Prakash, S, Eom, C-B, Ariando, A, Venkatesan, T, Radaelli, PG

“…However, the presence of dipolar fields in ferromagnets, which restricts the formation of ultrasmall topological textures3,6,8,9,12, and the deleterious skyrmion Hall effect, when skyrmions are driven by spin torques9,10,12, have thus far inhibited their practical implementation. …”

Engineered terahertz emission from spintronic heterostructures: amplitude, phase and chirality by Agarwal, Piyush

“…As such, the photoexcitation leads to ultrafast spin-scattering events in the FM, during which the spins transport from the FM into the adjacent heavy metal(HM) layer to experience an inverse spin Hall effect, producing a transverse charge current and terahertz radiation. …”
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Growth and characterization of InSb on (1 0 0) Si for mid-infrared application by Jia, Bo Wen, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt

“…The InSb on the AlSb sample exhibited higher crystal quality than the InSb on GaSb sample due to a more favorable arrangement of interfacial misfit dislocations. Hall measurements of unintentionally doped InSb layers demonstrated a higher carrier mobility in the InSb on the AlSb sample than in InSb on GaSb. …”
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Investigation of Ni as Zn substitute in CZTS thin film solar cell by Quek, Ka Jun

“…Energy-dispersive X-ray spectroscopy (EDX) was also done to check elemental composition of CNZTS in the thin film layer. AC Hall measurement was also conducted and it showed that the CNZTS layers have turned into n-type semiconductor when Ni substitution is more than 20% and also the carrier concentration increased significantly. …”
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Carrier scattering mechanisms limiting mobility in hydrogen-doped indium oxide by Husein, Sebastian, Stuckelberger, Michael, West, Bradley, Ding, Laura, Dauzou, Fabien, Morales-Masis, Monica, Duchamp, Martial, Holman, Zachary, Bertoni, Mariana I.

“…We use the temperature-dependent Hall mobility from 5 to 300 K to determine the limiting electron scattering mechanisms for each film and identify the temperature ranges over which these remain significant. …”
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Myth ascendant: issues of culture, media, and identity in the celebrity career of Glenn Gould by Campbell, A

“…This approach is refined through the application of Stuart Hall’s 'Circuit of Culture' model, which yields an understanding of Gould's celebrity in terms of the processes of its representation, production, regulation, and consumption. …”

Investigation of Sr-substituted Ba1-xSrx(Zn1/3Nb2/3)O3 complex perovskites: structural, electrical and electrochemical properties by Feng, Y., Tan, K.B., Chang, S.K., Sulaiman, Y., Lim, H.N., Lu, M., Wang, Y.

“…The nano-sized crystallites, as determined by both Scherrer and Williamson-Hall analyses, supported the claim of large polyhedral grains of 0.1–0.3 μm by FE-SEM. …”
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Nanotwins-containing microstructure and superior mechanical strength of a Cu‒9Al‒5Fe‒5Ni alloy additively manufactured by laser metal deposition by Li, Boyuan, Zheng, Han, Han, Changjun, Zhou, Kun

“…The yield strength of the LMD-printed alloy was 160% and 76% higher than that of the counterparts fabricated by casting and wire arc additive manufacturing, respectively, which was attributed to the synergistic effects of the underlying mechanisms including the Hall-Petch type strengthening, dislocation strengthening, precipitation strengthening, and solid solution strengthening. …”
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NTU Q-Count: smart spaces, informed choices by Sri Ganesh Babu Sri Vaishnavi

“…Moreover, it allows prospective NTU students and hall residents to find detailed information about each study space, such as its location, opening hours and restrictions, and navigate to the chosen locations through the Google Maps feature. …”
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Indications of surface-dominated transport in single crystalline nanoflake devices of topological insulator Bi_{1.5}Sb_{0.5}Te_{1.8}Se_{1.2} by Xia, Bin, Ren, Peng, Sulaev, Azat, Liu, Peng, Shen, Shun-Qing, Wang, Lan

“…Based on a two-channel model, the analysis on the resistivity and Hall resistance indicates that ∼99% surface transport contribution can be realized in 200 nm-thick BSTS nanoflake devices. …”
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Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments by Xie, Qingyun, Niroula, John, Rajput, Nitul S., Yuan, Mengyang, Luo, Shisong, Fu, Kai, Isamotu, Mohamed Fadil, Palash, Rafid Hassan, Sikder, Bejoy, Eisner, Savannah R., Surdi, Harshad, Belanger, Aidan J., Darmawi-Iskandar, Patrick K., Aksamija, Zlatan, Nemanich, Robert J., Goodnick, Stephen M., Senesky, Debbie G., Hunter, Gary W., Chowdhury, Nadim, Zhao, Yuji, Palacios, Tomás

“…Through transistor, Transmission Line Method (TLM), and Hall-effect measurements vs temperature, it is revealed that the mobility decrease is the primary cause of reduction of on-state performance of this GaN transistor at high temperature. …”
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Structure and dynamics of magnetic domain walls in multi-sublattice magnetic oxides by Huang, Siying

“…For the anomalously fast DW motion, we present an explanation by the field-like torque counteracting the damping-like torque and increasing the spin Hall efficiency. We propose measuring the DW velocity with a transverse field applied to probe this field-like torque, and present experimental evidence. …”
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