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Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD
Published 2023-01-01Subjects: “…4H-SiC homoepitaxial layers…”
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2
Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC
Published 2024-04-01Subjects: “…4H-SiC homoepitaxial layer…”
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3
Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates
Published 2022-12-01Subjects: “…4H-SiC homoepitaxial layer…”
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4
The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers
Published 2023-06-01Subjects: “…4H-SiC homoepitaxial layer…”
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