Principles and analysis of AIGaAS/GaAs heterojunction bipolar transistors / por 215006 Liou, Juin J.

Modeling and characterization of Schottky diode on AIGaAs/GaAs HEMT structure / por 263418 Siti Suhaila Mohd. Yusof, Abd. Manaf Hashim, Fakulti Kejuruteraan Elektrik

On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs PHEMTs por K. F. Yarn, W. C. Chien, C. S. Wang

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Occurrence of the green aIga Trentepohlia on the trunk and branches of durian por Lim, Tong Kwee, Sijam, Kamaruzaman

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Sequential tunnelling in GaAs/AIGaAs superlattices grown by molecular beam epitaxy por Han, Zhiyong.

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RF-to-DC characteristics of AIGaAs/GaAs HEMT schottky diode for rectenna application / por Khairul Huda Yusof, Abdul Manaf Hashim, Fakulti Kejuruteraan Elektrik

Surface And Interface Phonon Polaritons Characteristics In InAIGaN Quaternary Alloys por Aljameel, , Abdulaziz Ibraheem A

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Design,fabrication and characterization of n-AIGaAs/GaAs schottky diode for rectenna devices application / por Muhammad Fareq Ibrahim, author, Abdul Manaf Hashim, Fakulti Kejuruteraan Elektrik

Design, fabrication and characterization of AigaN/GaN high electron mobility transistor / por 457795 Nadia Abdul Razif, Abdul Manaf Hashim, Fakulti Kejuruteraan Elektrik

DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors por H. C. Chen

“…DC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor (NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. …”
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Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN por Hassan, Z., Yam, F. K., Lee, Y. C., Othman, S.

“…In this work, we investigate the thermal stability and surface morphology of Ti metal contact on unintentionally doped n-type aluminum gallium nitride (AIGaN). Different annealing temperatures (400C - 800C) and durations (1-30 minutes) are investigated, as thermally stable metal-semiconductor contacts are essential for high quality devices. …”
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RF-to-DC characteristics of AIGaAs/GaAs HEMT schottky diode for rectenna application [electronic resource] / por 542487 Khairul Huda Yusof, Abdul Manaf Hashim

Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction por Gao, Feng, Lo, Hsin-Yi, Ram, Rajeev J., Palacios, Tomas

“…n this paper, we have developed the first fully-coupled electro-thermo-mechanical simulation of AIGaN/GaN HEMTs to study the reliability of these devices as a function of bias voltage and operating temperature. …”
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Design fabrication and characterization of undoped AIGaN/GaN based high electron mobility transistor / por H. Sivanesswara Naidu, 1982-, Abdul Manaf Hashim

Interactions between drifting carrier plasma waves and electromagnetic waves in the interdigital - gated n - AIGaAs / GaAs HEMT devices / por Abdul Manaf Hashim, Zon Fazlila Mohd. Ahir, author, Seiya Kasai, author, Tamotsu Hashizume, author, Hideki Hasegawa, author, International Conference on the Formation of Semicounductor Inferfaces (ICF-12) (12th : 2009 : Weimar, Germany)i

RF to DC characteristics of AIGaAs/GaAs HEMT schottky diode for on chip RF detector and rectenna application in nano system / por Nofarariyanti Parimon, author, Farahiyah Mustafa, author, Shaharin Fadzli Abd. Rahman, 1983-, author, Abdul Rahim Abdul Rahman, author, Mohd. Nizam Osman, author, Abdul Manaf Hashim, author, Nanotwch Malaysia (2009 : Kuala Lumpur)i

Degradation study of AIGaN/GaN HEMT through electro-thermo-mechanical calculations and thermo-reflectance measurements por Gao, Feng, Ph. D. Massachusetts Institute of Technology

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Clinical immunological characteristics of anti-interferon-γ autoantibodies syndrome: a 3 year prospective cohort study por Siqiao Liang, Hanlin Liang, Xuemei Huang, Xiaona Liang, Ni Chen, Rong Xiao, Zengtao Luo, Quanfang Chen, Xinxin Zhong, Jingmin Deng, Jie Huang, Meihua Li, Meiling Yang, Wen Zeng, Haijuan Tang, Jing Jiang, Shouming Qin, Zhen Wei, Siyao Wu, Yan Ning, Ke Wang, Fu Cao, Jiujin Zhang, Qing Wei, Chengqiong Xu, Honglin Luo, Jian Song, Pei Li, Xiaokai Feng, Chenlu Yang, Jieping Lei, Hongwei Wang, Bin Cao, Zhiyi He

Assuntos: “…AIGAs…”
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The Latvian Women’s Relief Corps during the Latvian War of Independence, 1919–1920 por Aiga Bērziņa-Kite

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Electric vs. Internal Combustion Vehicles: A Multi-Regional Life Cycle Assessment Comparison for Environmental Sustainability por Mendziņš Kārlis, Barisa Aiga

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