Quantum Rainbows in Positron Transmission through Carbon Nanotubes by Marko Ćosić, Srđan Petrović, Nebojša Nešković

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Controlling the beam angle spread of carbon implantation for improvement of bin map defect in V-NAND flash memory by Gui-Fu Yang, Sung-Hwan Jang, SUNG-UK JANG, Tae-Hyun Lee, Da-Hye Kim, Jung-Ho Huh, Seok-Hyun Yoo

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Four Level Simulation of MOSFET by M. N. Doja, Moinuddin, Umesh Kumar

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Research on estimating effective order of radio channel in OFDM systems by LI Guo-song, ZHOU Zheng-ou

Subjects: “…OFDM;radio channel;effective order;LS algorithm…”
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Et usedvanlig sterkt medium? – En eksperimentstudie av politiske TV- og radioreklamer by Rune Karlsen, Stine Marie Waage

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Ultra Low Power High Speed Domino Logic Circuit by Using FinFET Technology by Ajay Kumar Dadoria, Kavita Khare, Tarun Kumar Gupta, R. P. Singh

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Perspective of Buried Oxide Thickness Variation on Triple Metal-Gate (TMG) Recessed-S/D FD-SOI MOSFET by Anjali Priya, Nilesh Anand Srivastava, Ram Awadh Mishra

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Channel Effect Compensation in LSF Domain by An-Tze Yu, Hsiao-Chuan Wang

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Modelling impacts of high-speed rail on urban interaction with social media in China’s mainland by Junfang Gong, Shengwen Li, Xinyue Ye, Qiong Peng, Sonali Kudva

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Improvement of Electromagnetic Side-Channel Information Measurement Platform by Shih-Yi Yuan, Wei-Sheng Liu

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Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM by Minjae Sun, Hyoung Won Baac, Changhwan Shin

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A sectorial scheme of gate-all-around field effect transistor with improved electrical characteristics by Mohammad Karbalaei, Daryoosh Dideban, Hadi Heidari

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Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect by Amin Rassekh, Jean-Michel Sallese, Farzan Jazaeri, Morteza Fathipour, Adrian M. Ionescu

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Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂ by Chong-Jhe Sun, Yi-Ju Yao, Siao-Cheng Yan, Yi-Wen Lin, Shan-Wen Lin, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu

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Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping by Deepika Gupta, Abhishek Kumar Upadhyay, Ankur Beohar, Santosh Kumar Vishvakarma

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Low Ge Content Ultra-Thin Fin Width (5nm) Monocrystalline SiGe n-Type FinFET With Low Off State Leakage and High I_ON/I_OFF Ratio by Chong-Jhe Sun, Meng-Ju Tsai, Siao-Cheng Yan, Tzu-Ming Chu, Chieng-Chung Hsu, Chun-Lin Chu, Guang-Li Luo, Yung-Chun Wu

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Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT by Yijun Shi, Wanjun Chen, Zhiwei Fu, Si Chen, Bo Zhang

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Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: A simulation study by Mohammad Karbalaei, Daryoosh Dideban, Hadi Heidari

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Steep Slope Field Effect Transistors Based on 2D Materials by Laixiang Qin, He Tian, Chunlai Li, Ziang Xie, Yiqun Wei, Yi Li, Jin He, Yutao Yue, Tian‐Ling Ren

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Vertical Gate-All-Around Device Architecture to Improve the Device Performance for Sub-5-nm Technology by Changwoo Noh, Changwoo Han, Sang Min Won, Changhwan Shin

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