InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings by Zejia Deng, Junze Li, Mingle Liao, Wuze Xie, Siyuan Luo

“…Our experiment may provide a reliable and simple approach for optimizing gratings and GaN DFB-LDs.…”
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شبیه‌سازی عددی عملکرد لیزر آبشار کوانتومی تراهرتزی AlGaN/GaN by علی اصغر خرمی, اصغر عسگری

“…در این مقاله، مدل‌سازی تمام عددی برای بررسی اثرات دما روی طول عمر ترازهای لیزری، بهرة اپتیکی و توان خروجی، در لیزر آبشار کوآنتومی آلایش شده AlGaN/GaN ارائه می‌گردد. در محاسبات، کلیة اثرات فیزیکی از جمله: میدان‌های قطبش داخلی و مکانیسم‌های مختلف پراکندگی، با استفاده از حل عددی خودسازگار معادلات شرودینگر، پواسون و آهنگ لیزر، در نظر گرفته شده است. …”
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Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT by Lin-Qing Zhang, Xiao-Li Wu, Wan-Qing Miao, Zhi-Yan Wu, Qian Xing, Peng-Fei Wang

Subjects: “…AlGaN/GaN…”
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Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes by Y. Robin, S. Y. Bae, T. V. Shubina, M. Pristovsek, E. A. Evropeitsev, D. A. Kirilenko, V. Yu. Davydov, A. N. Smirnov, A. A. Toropov, V. N. Jmerik, M. Kushimoto, S. Nitta, S. V. Ivanov, H. Amano

“…Abstract We report on the thorough investigation of light emitting diodes (LEDs) made of core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) in the outer shell, which are grown on patterned substrates by metal-organic vapor phase epitaxy. …”
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Comparison of Different Cooling Schemes for AlGaN/GaN High-Electron Mobility Transistors by Yunqian Song, Chuan Chen, Qidong Wang, Jianyu Feng, Rong Fu, Xiaobin Zhang, Liqiang Cao

Subjects: “…AlGaN/GaN HEMTs…”
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Temperature-Dependent Dynamic on Resistance in Gamma-Irradiated AlGaN/GaN Power HEMTs by Enrique Maset, Pedro Martín-Holgado, Yolanda Morilla, David Gilabert, Esteban Sanchis-Kilders, Pedro J. Martínez

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Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures by Wojciech Macherzynski, Jacek Gryglewicz, Andrzej Stafiniak, Joanna Prazmowska, Regina Paszkiewicz

“…The latter is a crucial factor in limiting the development of high performance AlGaN/GaN devices. Lowering of the resistance is assured by rapid thermal annealing process. …”
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AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation by Pingyu Cao, Kepeng Zhao, Harm Van Zalinge, Ping Zhang, Miao Cui, Fei Xue

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Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes by Kai Fu, Houqiang Fu, Xuanqi Huang, Tsung-Han Yang, Chi-Yin Cheng, Prudhvi Ram Peri, Hong Chen, Jossue Montes, Chen Yang, Jingan Zhou, Xuguang Deng, Xin Qi, David J. Smith, Stephen M. Goodnick, Yuji Zhao

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Effect of amorphous ternary AlBN passivations on the performance of AlGaN/GaN HEMTs by Jiantao Cheng, Fengfeng Liu, Chunping Jiang, Wenqing Zhu

“…In this article, an amorphous ternary AlBN dielectric passivation layer is proposed for GaN/AlGaN high-electron mobility transistors (HEMTs). …”
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Study on Optical Properties of Indium-Graded Semipolar InGaN/GaN Quantum Well by Fanming Zeng, Lihong Zhu, Wei Liu, Weicui Liu, Hongwei Wang, Baolin Liu

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Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier by Wen Wang, Xinxin Yu, Jianjun Zhou, Dunjun Chen, Kai Zhang, Cen Kong, Yuechan Kong, Zhonghui Li, Tangsheng Chen

Subjects: “…InAlGaN/GaN…”
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Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates by Bing Ren, Meiyong Liao, Masatomo Sumiya, Jian Huang, Linjun Wang, Yasuo Koide, Liwen Sang

Subjects: “…GaN…”
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Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors by Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Yotaro Wani, Hirotaka Watanabe, Hadi Sena, Yuto Ando, Yoshio Honda, Yasunori Igasaki, Akio Wakejima, Yuji Ando, Hiroshi Amano

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The Dynamic Modulation Doping Effect of Gas Molecules on an AlGaN/GaN Heterojunction Surface by Ying Ma, Lin Shi, Liang Chen, Cai Chen, Yifang Hong, Hua Qin, Xiaodong Zhang, Yi Cui, Hongzhen Lin, Zhiqun Cheng, Fan Zhang, Linfeng Mao, Yong Cai

Subjects: “…AlGaN/GaN heterojunction…”
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Laser slicing: A thin film lift-off method for GaN-on-GaN technology by Vladislav Voronenkov, Natalia Bochkareva, Ruslan Gorbunov, Andrey Zubrilov, Viktor Kogotkov, Philipp Latyshev, Yuri Lelikov, Andrey Leonidov, Yuri Shreter

“…A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. …”
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A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs by Yonghao Jia, Zhang Wen, Yongbo Chen, Cheng-Cheng Xie, Yong-Xin Guo, Yuehang Xu

“…In this paper, a threshold voltage model for charge trapping effect of AlGaN/GaN HEMTs is proposed. The quiescent bias stresses are considered for well modeling the current collapse critical points in pulsed I-V curves. …”
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Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells by Ross Cheriton, Sharif M. Sadaf, Luc Robichaud, Jacob J. Krich, Zetian Mi, Karin Hinzer

“…Here, enhanced two-photon carrier generation is demonstrated on a silicon substrate in an InGaN/GaN quantum dot-in-nanowire heterostructure intermediate band solar cell.…”
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Novel super stack passivation in AlGaN/GaN HEMT for power electronic applications by A Arunraja, K Suresh, S Senthilnathan

Subjects: “…AlGaN/GaN interface…”
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Simulation Optimization of AlGaN/GaN SBD with Field Plate Structures and Recessed Anode by Tao Xu, Ziqi Tang, Ziyou Zhou, Bing Zhou

Subjects: “…AlGaN/GaN SBD…”
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