Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates by Tao Lin, Zhi Yan Zhou, Yao Min Huang, Kun Yang, Bai Jun Zhang, Zhe Chuan Feng

Subjects: “…InGaN/GaN multiple quantum well…”
Get full text

Scaling Effect in Gate-Recessed AlGaN/GaN Fin-Nanochannel Array MOSHEMTs by Jhang-Jie Jia, Chih-Chien Lin, Ching-Ting Lee

Subjects: “…AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors…”
Get full text

Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells by Bilel Chouchen, Mohamed Hichem Gazzah, Abdullah Bajahzar, Hafedh Belmabrouk

Subjects: “…InGaN/GaN-MQW…”
Get full text

Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD by Anastasia A. Sleptsova, Sergey V. Chernykh, Dmitry A. Podgorny, Ilya A. Zhilnikov

“…We have studied the effect of silicon nitride (SiN) dielectric passivating film deposition by inductively coupled plasma chemical vapor deposition (ICP CVD) on the parameters of AlGaN/GaN heterostructure high electron mobility transistors (HEMT). …”
Get full text

Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors by GE Mei;, LI Yi;, WANG Zhiliang, ZHU Youhua

“…The band structure of the device and the electron concentration in the AlGaN/GaN channel are simulated to further study the physical mechanism on the relationship between device structure and the performance of the device. …”

Multiple-Submicron Channel Array Gate-Recessed AlGaN/GaN Fin-MOSHEMTs by Ching-Ting Lee, Hung-Yin Juo

Subjects: “…AlGaN/GaN metal-oxide semiconductor high electron mobility transistors…”
Get full text

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature by Ning Wang, Hui Wang, Xinpeng Lin, Yongle Qi, Tianli Duan, Lingli Jiang, Elina Iervolino, Kai Cheng, Hongyu Yu

“…Degradation on DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) after applying pulsed gate stress at cryogenic temperatures is presented in this paper. …”
Get full text

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells by Yadan Zhu, Taiping Lu, Xiaorun Zhou, Guangzhou Zhao, Hailiang Dong, Zhigang Jia, Xuguang Liu, Bingshe Xu

Subjects: “…InGaN…”
Get full text

An Investigation of Frequency Dependent Reliability and Failure Mechanism of pGaN Gated GaN HEMTs by Roshan L. Kini, Shankar Dhakal, Sadab Mahmud, Andrew J. Sellers, Michael R. Hontz, Cheikh A. Tine, Raghav Khanna

Subjects: Get full text

Low-Frequency Noise Behavior of AlGaN/GaN HEMTs with Different Al Compositions by Yeo Jin Choi, Jae-Hoon Lee, Sung Jin An, Ki-Sik Im

Subjects: “…GaN…”
Get full text

Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors by Jayanta Joglekar, Sameer

Get full text

Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments by Ruzzarin, M., Meneghini, M., De Santi, C., Sun, Min, Palacios, Tomas, Meneghesso, G., Zanoni, E.

“…We present an extensive analysis of the degradation of GaN-on-GaN fin-vertical transistors submitted to stress under positive gate voltage and off-state conditions. …”
Get full text

GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform by Yuan, Mengyang, Xie, Qingyun, Fu, Kai, Hossain, Toiyob, Niroula, John, Greer, James A., Chowdhury, Nadim, Zhao, Yuji, Palacios, Tomas

Get full text

Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform by Xie, Qingyun, Yuan, Mengyang, Niroula, John, Greer, James A., Rajput, Nitul S., Chowdhury, Nadim, Palacios, Tomas

Get full text

N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology by Chung, Jinwook, Piner, Edwin L., Palacios, Tomas

Subjects: “…GaN…”
Get full text
Get full text

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor by Lu, Bin, Saadat, Omair Irfan, Palacios, Tomas

“…In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. …”
Get full text
Get full text
Get full text

Advanced Gate Technologies for State-of-the-art f[subscript T] in AlGaN/GaN HEMTs by Chung, Jinwook, Kim, Tae-Woo, Palacios, Tomas

“…In this paper, the lower-than-expected frequency performance observed in many AlGaN/GaN high electron mobility transistors (HEMTs) has been attributed to a significant drop of the intrinsic small-signal transconductance (g[subscript m]) with respect to the intrinsic DC g[subscript m]. …”
Get full text
Get full text

Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures by Whiteside, Matthew David

“…AlGaN/GaN based high electron mobility transistors (HEMTs) are excellent for high-frequency and high-power applications such as DC-DC convertors, cellular base stations, radar and wireless communication systems. …”
Get full text

Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications by Wong, Yi Jing

“…This report presents the research work carried out to investigate two-dimensional hole gas (2DHG) in GaN-based heterostructures for GaN high electron mobility transistors (HEMTs) application. …”
Get full text

On-state reliability study of AlGaN/GaN high electron mobility transistor on silicon by Syaranamual, Govindo Joannesha

“…Monolithic integration of AlGaN/GaN high electron mobility transistor (HEMT) into silicon (Si) platform is very attractive as this is a cost-effective solution to extend the capabilities of silicon technology especially for high power and high frequency applications. …”
Get full text