Experimental study of AlGaN/GaN HEMT based devicesfor gas sensing applications by Jahan, Fina

“…This project aims to study high electron mobility transistors (HEMT) and their abilities, as well as the properties of two dimensional electron gas (2DEG) and III nitrides, specifically aluminium gallium nitride (AlGaN) and gallium nitride (GaN). Upon understanding these properties, gas sensing experiments were carried out in order to understand how the devices have responded to various factors such as temperature and relative humidity. …”
Get full text

Optical studies of non-linear absorption in single InGaN/GaN quantum dots by Jarjour, A, Taylor, R, Martin, R, Watson, I, Oliver, R, Briggs, G, Kappers, M, Humphreys, C

“…Nficro-photoluminescence properties of single InGaN/GaN quantum dots (QDs) are investigated using sub-bandgap excitation by 1 ps pulses from a Ti:sapphire laser. …”

Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot. by Collins, D, Jarjour, A, Hadjipanayi, M, Taylor, R, Oliver, R, Kappers, M, Humphreys, C, Tahraoui, A

“…We report on the use of interferometric autocorrelation measurements to investigate the non-linear absorption processes evident in single InGaN/GaN quantum dots. The near quadratic excitation intensity dependence of the photoluminescence signal in conjunction with the asymmetric collinear autocorrelation trace unambiguously confirms the process as being one involving two photons via an intermediate virtual state. …”

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot by Jarjour, A, Oliver, R, Tahraoui, A, Kappers, M, Humphreys, C, Taylor, R

“…This is achieved through the study of the radiative lifetime of a single InGaN-GaN quantum dot in a p-i-n diode structure. …”

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot. by Jarjour, A, Oliver, R, Tahraoui, A, Kappers, M, Humphreys, C, Taylor, R

“…This is achieved through the study of the radiative lifetime of a single InGaN-GaN quantum dot in a p-i-n diode structure. …”

Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays by Taylor, R, Rice, J, Na, J, Robinson, J, Martin, R, Edwards, P, Watson, I, Liu, C

“…InxGa1-xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. …”

Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness by Na, J, Taylor, R, Lee, K, Wang, T, Tahraoui, A, Parbrook, P, Fox, A, Yi, SN, Park, Y, Choi, J, Lee, J

Two-photon excitation spectroscopy of coupled asymmetric GaN/AlGaN quantum discs by Lee, K, Birner, S, Na, J, Taylor, R, Yi, SN, Park, Y, Park, C, Kang, T

Two-photon absorption in single site-controlled InGaN/GaN quantum dots by Jarjour, A, Parker, T, Taylor, R, Martin, R, Watson, I

“…We present micro-photoluminescence measurements on single site-controlled InGaN/GaN quantum dots using two-photon excitation Furthermore, measurements of photoluminescence excitation and time-resolved photoluminescence are also presented. …”

Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness by Na, J, Taylor, R, Lee, K, Wang, T, Tahraoui, A, Fox, A, Yi, S, Park, Y, Choi, J, Lee, J

“…Carrier localization in InGaN/GaN multiple-quantum wells (MQWs) with three different well thicknesses was investigated optically using time-integrated and time-resolved microphotoluminescence spectroscopy. …”

Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays by Edwards, P, Martin, R, Watson, I, Liu, C, Taylor, R, Rice, J, Na, J, Robinson, J, Smith, J

The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor by Mohamad, Mazuina, Fong, Yee Meng, Hashim, Abdul Manaf

“…The hydrogen sensing characteristics of undoped-AlGaN/GaN/sapphire circular Schottky diodes are systematically studied and compared over wide hydrogen concentration and temperature ranges. …”
Get full text

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells by George Christian, Menno Kappers, Fabien Massabuau, Colin Humphreys, Rachel Oliver, Philip Dawson

Subjects: Get full text

Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature by Tuan-Anh Vuong, Ho-Young Cha, Hyungtak Kim

“…AlGaN/GaN HEMT hydrogen gas sensors were optimized by AlGaN barrier thickness in the gate-source connected configuration demonstrated high response and robust stability up to 500 °C. …”
Get full text

Modeling on Monolithic Integration Structure of AlGaN/InGaN/GaN High Electron Mobility Transistors and LEDs: 2DEG Density and Radiative Recombination by Yuan An, Kailin Ren, Luqiao Yin, Jianhua Zhang

Subjects: “…AlGaN/InGaN/GaN HEMT…”
Get full text

Optical Performance of Two Dimensional Electron Gas and GaN:C Buffer Layers in AlGaN/AlN/GaN Heterostructures on SiC Substrate by Roman B. Adamov, Daniil Pashnev, Vadim A. Shalygin, Maria D. Moldavskaya, Maxim Ya. Vinnichenko, Vytautas Janonis, Justinas Jorudas, Saulius Tumėnas, Paweł Prystawko, Marcin Krysko, Maciej Sakowicz, Irmantas Kašalynas

Subjects: Get full text

Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy by Tian Li Duan, Ji Sheng Pan, Ning Wang, Kai Cheng, Hong Yu Yu

Subjects: Get full text

Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier by Zhenzhuo Zhang, Jing Yang, Degang Zhao, Feng Liang, Ping Chen, Zongshun Liu

Subjects: “…InGaN-based laser diodes…”
Get full text

Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium–Tin–Oxide Gate Electrode by Chih-Yao Chang, Chien-Sheng Wang, Ching-Yao Wang, Yao-Luen Shen, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang

Subjects: “…GaN…”
Get full text

Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED by Mahat, Mohamad Raqif, Talik, Noor Azrina, Abd Rahman, Mohd Nazri, Anuar, Mohd Afiq, Allif, Kamarul, Azman, Adreen, Nakajima, Hideki, Shuhaimi, Ahmad, Abd Majid, Wan Haliza

“…Electronic surface properties, optical and electrical characteristics of p-type Mg-doped Gallium Nitride (p-GaN) activated under different thermal annealing condition were investigated. …”