Plasmons in AlGaN/GaN grating-gate structure probing with 300 K background illumination by M. Dub, D. B. But, P. Sai, Yu. Ivonyak, M. Słowikowski, M. Filipiak, G. Cywinski, W. Knap, S. Rumyantsev

“…We show that terahertz plasmons in AlGaN/GaN grating-gate structures efficiently modulate the reflection of room temperature thermal radiation, leading to spectra that are in agreement with the measurements of plasmon absorption using high-power external sources. …”
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Growth Uniformity in Selective Area Epitaxy of AlGaN/GaN Heterostructures for the Application in Semiconductor Devices by Michał Stępniak, Mateusz Wośko, Joanna Prażmowska-Czajka, Andrzej Stafiniak, Dariusz Przybylski, Regina Paszkiewicz

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Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure by Xue-Feng Zheng, Guan-Jun Chen, Xiao-Hu Wang, Ying-Zhe Wang, Chong Wang, Wei Mao, Yang Lu, Bin Hou, Min-Han Mi, Ling Lv, Yan-Rong Cao, Qing Zhu, Gang Guo, Pei-Jun Ma, Xiao-Hua Ma, Yue Hao

“…The effect of 3 MeV proton irradiation on interface traps under a Schottky contact in an AlGaN/GaN heterostructure has been investigated in this work. …”
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Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor by Siva Pratap Reddy Mallem, Peddathimula Puneetha, Dong-Yeon Lee, Yoonkap Kim, Han-Jung Kim, Ki-Sik Im, Sung-Jin An

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Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors by Alessandro Caria, Carlo De Santi, Ezgi Dogmus, Farid Medjdoub, Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini

“…In this article, we investigate the behavior of InGaN–GaN Multiple Quantum Well (MQW) photodetectors under different excitation density (616 µW/cm² to 7.02 W/cm²) and temperature conditions (from 25 °C to 65 °C), relating the experimental results to carrier recombination/escape dynamics. …”
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Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage by Dai-Jie Lin, Chih-Kang Chang, Kuntal Barman, Yu-Chuan Chu, William Shih, Jian-Jang Huang

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Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment by Palacios, Tomas, Lu, Bin, Saadat, Omair Irfan, Piner, Edwin L.

“…Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. …”
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High Breakdown ( > \hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology by Lu, Bin, Palacios, Tomas

“…In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. …”
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Study of the effect of forward gate bias stress on the reliability of AlGaN/GaN HEMTs on SI by Gao, Yu

“…AlGaN/GaN high electron mobility transistors (HEMTs) have shown promising capabilities for high frequency and high-power applications. …”
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Enhanced performance of ultraviolet AlGaN/GaN photo-HEMTs by optimized channel isolation schemes by Mondal, Ramit Kumar, Xiong, Zhongshu, Ghimire, Mohan Kumar, Lingaparthi, Ravikiran, Nethaji, Dharmarasu, Radhakrishnan, K., Kim, Munho

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Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE by Manvi Agrawal

“…To address this, an in-depth study has been done on the growth of GaN layers using AlGaN/AlN and AlN/GaN as stress mitigating layers on Si (111). …”
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InGaN/GaN light-emitting diodes : from modeling to their hybrid applications with novel nanomaterials by Hasanov, Namig

“…In last two decades, InGaN/GaN light-emitting diodes have been one of the main focus of research thanks to their low power consumption, high efficiency, long lifetime, high color purity and color quality, narrow luminescence, possibility to tune the emission wavelength from near ultraviolet to green by increasing the In content, and several other promising properties. …”
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Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes by Zhang, Yiping, Zhang, Zi-Hui, Tan, Swee Tiam, Hernandez-Martinez, Pedro Ludwig, Zhu, Binbin, Lu, Shunpeng, Kang, Xue Jun, Sun, Xiao Wei, Demir, Hilmi Volkan

“…Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). …”
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Characterization of tunneling and free-carrier screening in coupled asymmetric GaN/AlGaN quantum discs by Lee, K, Na, J, Birner, S, Yi, SN, Taylor, R, Park, Y, Park, C, Kang, T

“…We present a systematic investigation of free-carrier screening in coupled asymmetric GaN quantum discs with embedded AlGaN barriers using time-integrated and time-resolved micro-photoluminescence measurements, supported by three-dimensional multi-band k.p computational modeling. …”

Towards cavity quantum electrodynamics and coherent control with single InGaN/GaN quantum dots by Reid, BPL

“…<p>Experimental investigations of the optical properties of InGaN/GaN quantum dots are presented. A pulsed laser is used to perform time-integrated and time-resolved microphotoluminescence, photoluminescence excitation, and polarisation-resolved spectroscopy of single InGaN quantum dots under a non-linear excitation regime.…”

Optical cavity efficacy and lasing of focused ion beam milled GaN/InGaN micropillars by El-Ella, H, Collins, D, Kappers, M, Taylor, R, Oliver, R

“…Focused ion beam milled micropillars employing upper and lower distributed Bragg reflectors (DBRs) and incorporating InGaN quantum dots were analysed both microstructurally and optically. …”

Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots by Kanta Patra, S, Wang, T, Puchtler, T, Zhu, T, Oliver, R, Taylor, R, Schulz, S

“…We present here a combined experimental and theoretical analysis of the radiative recombination lifetime in a-plane (11 (Formula presented.) 0) InGaN/GaN quantum dots. The structures have been grown by modified droplet epitaxy and time-resolved photoluminescence measurements have been performed to gain insight into the radiative lifetimes of these structures. …”

Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN by Kamarudzaman, Anas, Shuhaimi, Ahmad, Azman, Adreen, Omar, Al-Zuhairi, Supangat, Azzuliani, Talik, Noor Azrina

“…We report the effect of 40 pairs of periodic AlN/GaN multilayers on the a-plane undoped-gallium nitride (ud-GaN) grown on r-plane flat sapphire substrate via metal-organic chemical vapor deposition. …”

The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures by Yusof, Ahmad Sauffi, Hassan, Zainuriah, Hamady, Sidi, Sha, Shiong Ng, Ahmad, Mohd Anas, Way, Foong Lim, Fressengeas, Nicolas, Chevallier, Christyves

“…The InGaN/GaN heterostructures were epitaxially grown on 3.8 μm and 40 nm thick undoped-GaN (ud-GaN) and GaN nucleation layer respectively over a commercial 2” c-plane flat sapphire substrate (FSS). …”
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The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures by Yusof, Ahmad Sauffi, Hassan, Zainuriah, Hamady, Sidi, Ng, Sha Shiong, Ahmad, Mohd Anas, Way, Foong Lim, Fressengeas, Nicolas, Chevallier, Christyves

“…The InGaN/GaN heterostructures were epitaxially grown on 3.8 μm and 40 nm thick undoped-GaN (ud-GaN) and GaN nucleation layer respectively over a commercial 2” c-plane flat sapphire substrate (FSS). …”
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