Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs by Maodan Ma, Yanrong Cao, Hanghang Lv, Zhiheng Wang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao

Subjects: “…AlGaN/GaN HEMTs…”
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Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT by Yusnizam Yusuf, Muhammad Esmed Alif Samsudin, Muhamad Ikram Md Taib, Mohd Anas Ahmad, Mohamed Fauzi Packeer Mohamed, Hiroshi Kawarada, Shaili Falina, Norzaini Zainal, Mohd Syamsul

Subjects: “…AlGaN/GaN…”
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Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications by Tevye Kuykendall, Shaul Aloni, Ilan Jen-La Plante, Taleb Mokari

“…We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). …”
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Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire by Chua, Soo-Jin, Fitzgerald, Eugene A., Song, T.L.

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Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epliayers Grown on Sapphire by Song, T.L., Chua, Soo-Jin, Fitzgerald, Eugene A.

Subjects: “…graded InGaN buffers…”
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Photoluminescence properties of a single GaN nanorod with GaN/AlGaN multilayer quantum disks by Yi, SN, Na, J, Lee, K, Jarjour, A, Taylor, R, Park, Y, Kang, T, Kim, S, Ha, D, Andrew, G, Briggs, D

Control of yellow photoluminescence in AlGaN/GaN heterostructures by Nadezhda B. Gladysheva, Vadim V. Gruzdov, Yurii V. Kolkovskii, Yulii A. Kontsevoy, Evgenii F. Pevtsov

“…This determines the reliability of GaN microwave transistor operation. Two types of units for control of photoluminescence with the peak in the yellow visible spectral region have been designed with the aim to control the quality of AlGaN/GaN/SiC and AlGaN/GaN/Al2O3 heterostructures. …”
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Wet-based digital etching on GaN and AlGaN by Shih, Pao-Chuan, Engel, Zachary, Ahmad, Habib, Doolittle, William Alan, Palacios, Tomás

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AlGaN/GaN HEMT With 300-GHz fmax by Chung, Jinwook, Hoke, William E., Chumbes, Eduardo M., Palacios, Tomas

“…We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC substrate with a record power-gain cutoff frequency (f[subscript max]). …”
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AlGaN/GaN-based power semiconductor switches by Lu, Bin, Ph. D. Massachusetts Institute of Technology

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Magneto-photoluminescence of AlGaN/GaN quantum wells by Shields, P, Nicholas, R, Grandjean, N, Massies, J

“…The magneto-luminescence of GaN/AlGaN quantum wells in fields up to 52 T shows a field dependence that is strongly dependent on the well width. …”

Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure by Duan, Tian Li, Pan, Ji Sheng, Ang, Diing Shenp

“…The interface electronic structures of GaN and GaN/AlGaN/GaN samples, capped with atomic-layer-deposited Al2O3 and subjected to varying post-deposition annealing (PDA) temperatures, are investigated by X-ray photoelectron spectroscopy (XPS) and Hall-effect measurement. …”
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Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas by A. D. Yunik, A. H. Shydlouski

“…Regularities of the reflected signal intensity changing in time, recorded by the detector of the laser interferometer with the operating frequency of 670 nm during the inductively coupled plasma reactive ion etching in a Cl2/N2/O2 atmosphere of GaN, p-GaN and AlGaN in AlGaN/GaN and p-GaN/AlGaN/GaN heterostructures has been established by laser interferometry and scanning electron microscopy methods due to the changes in refractive indices and etching rates. …”
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Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy by Wang Yongjin, Hu Fangren, Hane Kazuhiro

“…<p>Abstract</p> <p>We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). …”
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Структурно-спектроскопические исследования эпитаксиально- доращиваемых контактных слоев GaN, n-GaN и n+-GaN by Павел Владимирович Середин, Дмитрий Леонидович Голощапов, Даниил Евгеньевич Костомаха, Ярослав Анатольевич Пешков, Никита Сергеевич Буйлов, Алиса Алексеевна Гайворонская, Андрей Михайлович Мизеров, Сергей Николаевич Тимошнев, Максим Сергеевич Соболев, Евгений Викторович Убыйвовк, Валерий Евгеньевич Земляков, Павел Павлович Куцько, Павел Леонидович Пармон

“…В работе демонстрируется, что с использованием технологии молекулярно-пучковой эпитаксии с плазменной активацией азота (МПЭ ПА) могут быть сформированы структурно-качественные эпитаксиально-доращиваемые контактные GaN, n-GaN и n+-GaN на виртуальных подложках GaN/c-Al2O3 в Ga-обогащенных условиях при относительно низких температурах роста ~700 °C. …”
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Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors by Haiping Wang, Haifan You, Jiangui Yang, Minqiang Yang, Lu Wang, Hong Zhao, Zili Xie, Dunjun Chen

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Optimizing DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN HEMT for GHZ application by Ahmad Neda, Rewari Sonam, Nath Vandana

“…This paper presents a design and in-depth analysis of DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN High Electron Mobility Transistor (HEMT) for microwave application. …”
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Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs by Myeongsu Chae, Ho-Young Cha, Hyungtak Kim

Subjects: “…p-GaN gate HEMTs…”
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Thermal Field Analysis for New AlGaN/GaN HEMT With Partial Etched AlGaN Layer by Baoxing Duan, Luoyun Yang, Hao Wu, Yintang Yang

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High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology by Yuan, Mengyang, Xie, Qingyun, Niroula, John, Isamotu, Mohamed Fadil, Rajput, Nitul S., Chowdhury, Nadim, Palacios, Tomas

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