Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency by Haiyang Zheng, Vijay Kumar Sharma, Pingchieh Tsai, Yiping Zhang, Shunpeng Lu, Xueliang Zhang, Swee Tiam Tan, Hilmi Volkan Demir

“…We demonstrate a systematic way to understand and select the accelerating voltage for maximizing cathodoluminescence (CL) by correlating the carrier diffusion length with the efficiency of ultraviolet (UV) InGaN/AlGaN multiple quantum wells (MQWs). We showed that the absorption of MQWs benefits from the absorbed energy within the diffusion length below the MQWs. …”
Get full text

Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors by Dae-Young Jeon, Yumin Koh, Chu-Young Cho, Kyung-Ho Park

“…AlGaN/GaN high electron mobility transistors (HEMTs) possess excellent electrical and thermal properties. …”
Get full text

Identification of the Kirkendall effect as a mechanism responsible for thermal decomposition of the InGaN/GaN MQWs system by Roman Hrytsak, Pawel Kempisty, Michal Leszczynski, Malgorzata Sznajder

“…A drop in the efficiency of light-emitting diodes based on InGaN/GaN QWs known as the ‘green gap’ has been studied intensively over the past dozen years. …”
Get full text

Effect of different well growth rates on the luminescence characteristics of InGaN/GaN green quantum well by Yuntao Zhao, Guanghui Li, Shuai Zhang, Linkai Yi, Haoran Qi, Feng Liang, Jing Yang, Mei Zhou, Huixing Shen, Degang Zhao

Subjects: “…InGaN/GaN…”
Get full text

Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures. by Ahmed Mohamed, Kihoon Park, Can Bayram, Mitra Dutta, Michael Stroscio

“…In this work, we investigate the probability of phonon emission as a function of electron energy for confined and interface (IF) phonon modes for wurtzite GaN/InGaN/GaN heterostructures. Hot electrons radiate optical phonons which decay, anharmonically, into acoustic phonons that are essentially heat carriers. …”
Get full text

Monolithic Si-Based AlGaN/GaN MIS-HEMTs Comparator and Its High Temperature Characteristics by Fan Li, Ang Li, Yuhao Zhu, Chengmurong Ding, Yubo Wang, Weisheng Wang, Miao Cui, Yinchao Zhao, Huiqing Wen, Wen Liu

Subjects: “…AlGaN/GaN MIS-HEMT…”
Get full text

Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate by Qiang Ma, Yuji Ando, Akio Wakejima

“…Abstract This paper investigates the electron trapping behaviour after bias stress in GaN high‐electron‐mobility transistors (HEMTs) fabricated on GaN substrate. …”
Get full text

Well-arranged novel InGaN hexagonal nanoplates at the tops of nitrogen-polarity GaN nanocolumn arrays by Tetsuya Kouno, Katsumi Kishino

“…Periodically arranged novel InGaN hexagonal nanoplates were fabricated at the tops of square-lattice N-polarity GaN nanocolumn arrays. …”
Get full text

Effect of SiC substrate properties on structural perfection and electrical parameters of AlGaN/GaN layers by Kira L. Enisherlova, Tatyana F. Rusak, Vyacheslav I. Korneev, Anna N. Zazulina

“…We have analyzed the effect of volume and surface defects in SiC substrates on the structure and electrophysical parameters of AlGaN/GaN epitaxial heterostructures grown on them. …”
Get full text

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED by D. Broxtermann, M. Sivis, J. Malindretos, A. Rizzi

“…We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm2V−1s−1 at 2 K. …”
Get full text

Improvement in the Light Extraction of Blue InGaN/GaN-Based LEDs Using Patterned Metal Contacts by Anand Kadiyala, Kyoungnae Lee, L. E. Rodak, Lawrence A. Hornak, Dimitris Korakakis, Jeremy M. Dawson

“…A patterned metal contact with an array of Silicon Oxide (SiO_x) pillars (440 nm in size) on an InGaN/GaN-based MQW LED has shown to increase output illumination uniformity through experimental characterization. …”
Get full text

Effects of InGaN-interlayer on closed stripes of GaN grown by serpentine channel patterned sapphire substrate by Muhammad Saddique Akbar Khan, Menglai Lei, Huanqing Chen, Guo Yu, Rui Lang, Shukun Li, Xiaodong Hu

Subjects: “…GaN…”
Get full text

Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors by Ajay Kumar Visvkarma, Chandan Sharma, Robert Laishram, Sonalee Kapoor, D. S. Rawal, Seema Vinayak, Manoj Saxena

“…Au Schottky diodes on an AlGaN/GaN heterostructure exhibit better electrical performance in comparison to conventional Ni/Au diodes with an improved Schottky barrier height (SBH) and lower reverse leakage current. …”
Get full text

Suppression of hot electron effect in AlGaN/GaN HEMT with multi-grooves barrier-etched structure by Xuanlin Li, Jie Xu, Weijing Liu

Subjects: “…GaN HEMT…”
Get full text

AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein by Hee Ho Lee, Myunghan Bae, Sung-Hyun Jo, Jang-Kyoo Shin, Dong Hyeok Son, Chul-Ho Won, Hyun-Min Jeong, Jung-Hee Lee, Shin-Won Kang

Subjects: “…AlGaN/GaN…”
Get full text

GaN-on-Si: Monolithically Integrated All-GaN Drivers for High-Voltage DC-DC Power Conversion by Chin Hsia, Deng-Fong Lu

Subjects: “…GaN technology…”
Get full text

Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacks by King, M. P., Dickerson, J. R., DasGupta, S., Marinella, M. J., Kaplar, R. J., Piedra, Daniel, Sun, Min, Palacios, Tomas

“…Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO₂ gate dielectric. …”
Get full text
Get full text
Get full text
Get full text

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors by Sasangka, W.A., Gao, Y., Gan, C.L., Thompson, Carl Vernette

“…We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). …”
Get full text

Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors by Chung, Jinwook W. (Jinwook Will)

Get full text

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors by Makaram, Prashanth, Joh, Jungwoo, del Alamo, Jesus A., Palacios, Tomas, Thompson, Carl V.

“…We have investigated the surface morphology of electrically stressed AlGaN/GaN high electron mobility transistors using atomic force microscopy and scanning electron microscopy after removing the gate metallization by chemical etching. …”
Get full text
Get full text
Get full text