Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors by Gao, Yu, Gan, Chee Lip, Thompson, C. V., Sasangka, W. A.

Subjects: “…AlGaN/GaN HEMTs…”
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Self-heating and trapping effect in AlGaN/GaN high electron mobility transistors on CVD-diamond by Kumud Ranjan

“…GaN-based high-electron-mobility Transistors (HEMTs) are widely used for high frequency, high voltage and high-power applications. …”
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Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-Diamond by Ranjan, Kumud, Arulkumaran, S., Ng, Geok Ing, Sandupatla, A.

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Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency by Zheng, Haiyang, Sharma, Vijay Kumar, Tsai, Ping Chieh, Zhang, Yiping, Lu, Shunpeng, Zhang, Xueliang, Tan, Swee Tiam, Demir, Hilmi Volkan

“…We demonstrate a systematic way to understand and select the accelerating voltage for maximizing cathodoluminescence (CL) by correlating the carrier diffusion length with the efficiency of ultraviolet InGaN/GaN multiple quantum wells (MQWs). We showed that the MQWs absorption benefits from the absorbed energy within the diffusion length below the MQWs. …”
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Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes by Zhang, Yi Ping, Zhang, Zi-Hui, Liu, Wei, Tan, Swee Tiam, Ju, Zhen Gang, Zhang, Xue Liang, Ji, Yun, Wang, Lian Cheng, Kyaw, Zabu, Hasanov, Namig, Zhu, Bin Bin, Lu, Shun Peng, Sun, Xiao Wei, Demir, Hilmi Volkan

“…In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. …”
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AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111) by Dolmanan, S. B., Kajen, R. S., Bera, L. K., Teo, S. L., Wang, W. Z., Li, H., Lee, D., Han, S., Tripathy, Sudhiranjan, Lin, Vivian Kaixin, Tan, Joyce Pei Ying, Kumar, M. Krishna, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Todd, Shane, Lo, Guo-Qiang

“…This Letter reports on the epitaxial growth, characterization, and device characteristics of crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si(111) substrate. …”
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Photoluminescence of Single GaN/InGaN Nanorod Light Emitting Diode Fabricated on a Wafer Scale by Chan, C, Zhuang, Y, Reid, B, Jia, W, Holmes, M, Alexander-Webber, J, Nakazawa, S, Shields, P, Allsopp, D, Taylor, R

“…Nanorod arrays were fabricated on a blue InGaN/GaN single quantum well (QW) LED wafer using nanoimprint lithography. …”

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal by Oliver, R, Kappers, M, Rice, J, Smith, J, Taylor, R, Humphreys, C, Briggs, G

“…We have studied the growth of InGaN epitaxial layers on GaN by MOVPE (metal-organic vapour phase epitaxy), and have discovered that nanostructures may be formed if a flat epilayer is annealed in molecular nitrogen immediately after growth. …”

Enhancement of free-carrier screening due to tunneling in coupled asymmetric GaN/AlGaN quantum discs by Lee, K, Na, J, Taylor, R, Yi, SN, Birner, S, Park, Y, Park, C, Kang, T

Growth of InGaN quantum dots with AlGaN barrier layers via modified droplet epitaxy by Oliver, R, El-Ella, H, Collins, D, Reid, B, Zhang, Y, Christie, F, Kappers, M, Taylor, R

Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions by Othman, Nurul Aida Farhana, Rahman, Sharidya, Wan Muhamad Hatta, Sharifah Fatmadiana, Soin, Norhayati, Benbakhti, Brahim, Duffy, Steven

Effect Of GaN Nucleation Layer Temperature On Structural And Morphological Properties Of Ud-GaN Template Grown On Pss by Ahmad, M. A., Hamzah, N. A., Asri1, R. I. M., Zainal, N., Hassan, Z.

“…Further, the atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) analysis were performed to study the morphology of ud-GaN growth at different temperature GaN nucleation layers. …”
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GateLESS-FET pH sensor fabricated on undoped-AlGaN/GaN HEMT structure by Zainal Abidin, Mastura Shafinaz, Abd Rahman, Shaharin Fadzli, Hashim, Abdul Manaf, Abdul Rahman, Abdul Rahim

“…In ambient atmosphere, the open-gate undoped AlGaN/GaN HEMT clearly showed only the presence of linear region of currents while Si-doped AlGaN/GaN showed the linear and saturation regions of currents, very similar to those of gated devices. …”

Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating Etching Technique with Multi-Finger Architecture Modulation for High Power Application by Ya-Chun Chang, Yu-Li Ho, Tz-Yan Huang, Ding-Wei Huang, Chao-Hsin Wu

Subjects: “…gallium nitride (GaN)…”
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Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE) by Ho Xin Jing, Che Azurahanim Che Abdullah, Mohd Zaki Mohd Yusoff, Azzafeerah Mahyuddin, Zainuriah Hassan

“…In this study, the Aluminium Nitride/Gallium Nitride (AlN/GaN) layers and Aluminium Nitride/Aluminium Gallium Nitride/Gallium Nitride (AlN/AlGaN/GaN) layer heterostructures were successfully created using technique known as plasma-assisted molecular beam epitaxy (MBE) on silicon substrate. …”
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Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy by Ravikiran, L., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Yiding, Lin, Arulkumaran, S., Vicknesh, S., Ng, G. I.

“…To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. …”
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GaN transistors for efficient power conversion / by Lidow, Alex, author, Strydom, Johan, author, Rooij, Michael de, author, Reusch, David, author

GaN Transistors for Efficient Power Conversion / by Lidow, Alex, author, De Rooij, Michael, author, Strydom, Johan, author, Reusch, David, author, Glaser, John, author

“…"Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. 35% new material including 3 new chapters on Thermal Management, Multi-Level Converters and LiDAR - Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors. …”

On the thermal conductivity anisotropy in wurtzite GaN by Dat Q. Tran, Tania Paskova, Vanya Darakchieva, Plamen P. Paskov

“…GaN-based power devices operating at high currents and high voltages are critically affected by the dissipation of Joule heat generated in the active regions. …”
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Ion Implantation into Nonconventional GaN Structures by Katharina Lorenz

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