Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes by Jian Yin, David Hwang, Hossein Zamani Siboni, Ehsanollah Fathi, Reza Chaji, Dayan Ban

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SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors by Hyun-Seop Kim, Kwang-Seok Seo, Jungwoo Oh, Ho-Young Cha

“…In this study, we have investigated the effects of SF6 plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). …”
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Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment by Yufei Hou, Feng Liang, Degang Zhao, Zongshun Liu, Ping Chen, Jing Yang

Subjects: “…InGaN/GaN multiple quantum wells…”
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Deep-level traps in lightly Si-doped n-GaN on free-standing m-oriented GaN substrates by H. Yamada, H. Chonan, T. Takahashi, T. Yamada, M. Shimizu

“…In this study, we investigated the deep-level traps in Si-doped GaN epitaxial layers by metal-organic chemical vapor deposition on c-oriented and m-oriented free-standing GaN substrates. …”
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Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates by Carsten Beckmann, Zineng Yang, Jens Wieben, Thorsten Zweipfennig, Jasmin Ehrler, Arno Kirchbrucher, Holger Kalisch, Andrei Vescan

“…We report on p-channel metal-insulator-semiconductor heterostructure field-effect transistors (MISHFET) based on p-GaN/uid-GaN/Al textsubscript 0.29Ga textsubscript 0.71N single heterostructures on sapphire substrates, grown by metalorganic vapor phase epitaxy (MOVPE). …”
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Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence by Yao Xing, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Ping Chen, Jing Yang, Feng Liang, Shuangtao Liu, Liqun Zhang

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Investigation of Nano-Heat-Transfer Variability of AlGaN/GaN-Heterostructure-Based High-Electron-Mobility Transistors by Haikel Mzoughi, Faouzi Nasri, Maha Almoneef, Sonia Soltani, Mohamed Mbarek, Amenallah Guizani

Subjects: “…AlGaN–GaN HEMT…”
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Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature by Xingchen Liu, Ning Tang, Shixiong Zhang, Xiaoyue Zhang, Hongming Guan, Yunfan Zhang, Xuan Qian, Yang Ji, Weikun Ge, Bo Shen

“…In this work, the dependence of the spin relaxation time on external strain‐induced polarization electric field is investigated in InGaN/GaN multiple quantum wells (MQWs) by time‐resolved Kerr rotation spectroscopy. …”
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Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application by Jianming Lei, Rui Wang, Guo Yang, Jin Wang, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng

Subjects: “…AlGaN/GaN HEMT…”
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Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate by Matthew Whiteside, Subramaniam Arulkumaran, Yilmaz Dikme, Abhinay Sandupatla, Geok Ing Ng

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Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates by Masatomo Sumiya, Naoki Toyomitsu, Yoshitaka Nakano, Jianyu Wang, Yoshitomo Harada, Liwen Sang, Takashi Sekiguchi, Tomohiro Yamaguchi, Tohru Honda

“…We studied the emissive pits in InGaN films grown on compressive and strain-free GaN underlying layers. …”
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Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble by David van Treeck, Johannes Ledig, Gregor Scholz, Jonas Lähnemann, Mattia Musolino, Abbes Tahraoui, Oliver Brandt, Andreas Waag, Henning Riechert, Lutz Geelhaar

“…We present the combined analysis of electroluminescence (EL) and current–voltage (I–V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. …”
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Insights Into the Two-Dimensional MoS₂ Grown on AlGaN(GaN) Substrates by CVD Method by Guofeng Yang, Yu Ding, Naiyan Lu, Feng Xie, Yan Gu, Bingjie Ye, Yufei Yao, Xiumei Zhang, Xinxia Huo

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A Temperature Stable Amplifier Characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si by Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura, Akio Wakejima

Subjects: “…GaN-on-Si HEMT…”
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Effect of Hydrostatic Pressure on Optical Absorption Coefficient of InGaN/GaN of Multiple Quantum Well Solar Cells by Rajab yahyazadeh, zahra hashempour

“…In this paper, a numerical model is used to analyze an optical absorption coefficient according to the electronic properties of InGaN/GaN multiple-quantum-well solar cells (MQWSC) under hydrostatic pressure. …”
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Analysis and experiment of the sensitivity of AlGaN/GaN based heterostructure all-solid-state pH sensor by Yaqiong Dai, Jieying Xing, Longkun Yang, Yaohui Wen, Linglong Wang, Wanqing Yao, Xiaobiao Han, Yuan Ren, Yuebo Liu, Zhisheng Wu, Yang Liu, Baijun Zhang

“…On this basis, we put forward a method that can separate the effect of the sensitive membrane on the sensitivity from the material completely by designing a series of AlGaN/GaN based heterostructure ISFET pH sensors with different sizes of the channel area (width/length parameter). …”
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Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves by S. Lazić, E. Chernysheva, Ž. Gačević, H. P. van der Meulen, E. Calleja, J. M. Calleja Pardo

“…The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). …”
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Hexagonal Boron Nitride Passivation Layer for Improving the Performance and Reliability of InGaN/GaN Light-Emitting Diodes by Gun-Hee Lee, Tran-Viet Cuong, Dong-Kyu Yeo, Hyunjin Cho, Beo-Deul Ryu, Eun-Mi Kim, Tae-Sik Nam, Eun-Kyung Suh, Tae-Hoon Seo, Chang-Hee Hong

“…We introduce a low temperature process for coating InGaN/GaN light-emitting diodes (LEDs) with h-BN as a passivation layer. …”
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An AlGaN/GaN Lateral Bidirectional Current-Regulating Diode with Two Symmetrical Hybrid Ohmic-Schottky Structures by Yijun Shi, Zongqi Cai, Yun Huang, Zhiyuan He, Yiqiang Chen, Liye Cheng, Guoguang Lu

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Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate by Pengfei Li, Shuhua Wei, Xuanwu Kang, Yingkui Zheng, Jing Zhang, Hao Wu, Ke Wei, Jiang Yan, Xinyu Liu

Subjects: “…AlGaN/GaN HEMTs…”
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