Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires by Puchtler, T, Wang, T, Ren, C, Tang, F, Oliver, R, Taylor, R, Zhu, T

“…We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. …”

Cavity-enhanced blue single-photon emission from a single InGaN/GaN quantum dot by Jarjour, A, Taylor, R, Oliver, R, Kappers, M, Humphreys, C, Tahraoui, A

Optical studies of GaN nanocolumns containing InGaN quantum disks and the effect of strain relaxation on the carrier distribution by Holmes, M, Park, Y, Wang, X, Chan, C, Reid, B, Kim, H, Luo, J, Warner, J, Taylor, R

Optical studies of GaN nanocolumns containing InGaN quantum disks and the effect of strain relaxation on the carrier distribution by Holmes, M, Park, Y, Wang, X, Chan, C, Reid, B, Kim, H, Luo, J, Warner, J, Taylor, R

“…The optical properties of GaN nanocolumns containing pairs of In xGa 1-xN (x ∼ 0.1) quantum disks (QDisks) have been experimentally measured. …”

Quantum and transport lifetimes in a tunable low-density AlGaN/GaN two-dimensional electron gas by Manfra, M, Simon, S, Baldwin, K, Sergent, A, West, K, Molnar, R, Caissie, J

“…We experimentally determine the density dependence of the transport lifetime (τ t) obtained from low-field Hall measurements and the quantum lifetime (τ q) derived from analysis of the amplitude of Shubnikov-de Haas oscillations in a tunable high mobility two-dimensional electron gas (2DEG) in a Al 0.06Ga 0.94N/GaN heterostructure. Using an insulated gate structure, we are able to tune the 2DEG density from 2 × 10 11 to 2 × 10 12 cm -2, and thus, monitor the evolution of the scattering times in a single sample at T=0.3 K in a previously unexplored density regime. …”

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes by Severs, J, Lozano, J, Hooper, S, Nellist, P

“…The novel materials studied here have been developed with the aim of reducing both of these effects and consist of a series of GaN and InGaN layers deposited by chemical vapour deposition on the non-polar, m-plane facets of core structures prepared from c-axis GaN thin films. …”

Gateless-FET pH sensor fabricated on undoped AlGaN/GaN HEMT structure HEMT structure by Maneea Eizadi Sharifabad, Mastura Shafinaz Zainal Abidin, Shaharin Fadzli Abd Rahman, Abdul Manaf Hashim, Abdul Rahim Abdul Rahman, Nurul Afzan Omar, Mohd Nizam Osman, Rabia Qindeel

“…In ambient atmosphere, the open-gate undoped AlGaN/GaN HEMT clearly showed only the presence of linear region of currents while Si-doped AlGaN/GaN showed the linear and saturation regions of currents, very similar to those of gated devices. …”
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Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes by Asri, R. I. M., Hamzah, N. A.

“…InGaN/GaN blue light-emitting diodes (LEDs) have been successfully growth via metal organic chemical vapor deposition (MOCVD) in temperature range 920 to 1020 °C growth temperatures for p-GaN layer. …”
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Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes by Asri, R. I. M, Hamzah, N. A, Ahmad, M. A., Alias, E. A., Sahar, M. M., Abdullah, M.

“…InGaN/GaN blue light-emitting diodes (LEDs) have been successfully growth via metal organic chemical vapor deposition (MOCVD) in temperature range 920 to 1020 °C growth temperatures for p-GaN layer. …”
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Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication by Lee, Mei Yee, Mat Jubadi, Wasuzarina

“…In recent years, the group III – nitride semiconductor compounds with gallium (Ga) have developed as the leading materials for manufacturing energy-efficient LED [1]. The reason of GaN becoming the trend is due to the excellent optical properties and it is able to emit a wide range of wavelengths in the visible spectrum at the efficiency which greater than traditional lighting technologies [2]. …”
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Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes by Po-Hsun Lei, Po-Chun Yang, Po-Chun Huang

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A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells by Wei Liu, Zeyu Liu, Hengyan Zhao, Junjie Gao

Subjects: “…last InGaN quantum well…”
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Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array by Hsin-Ying Lee, Day-Shan Liu, Jen-Inn Chyi, Edward Yi Chang, Ching-Ting Lee

“…Multiple-mesa-fin-channel array patterned by a laser interference photolithography system and gallium oxide (Ga₂O₃) gate oxide layer deposited by a vapor cooling condensation system were employed in double-channel Al_0.83In_0.17N/GaN/Al_0.18Ga_0.82N/GaN heterostructured-metal-oxide-semiconductors (MOSHEMTs). …”
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The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes by P. Chen, D. G. Zhao, D. S. Jiang, J. J. Zhu, Z. S. Liu, J. Yang, X. Li, L. C. Le, X. G. He, W. Liu, X. J. Li, F. Liang, B. S. Zhang, H. Yang, Y. T. Zhang, G. T. Du

“…In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. …”
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Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process by Won-Ho Jang, Jun-Hyeok Yim, Hyungtak Kim, Ho-Young Cha

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Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells by Xuan Li, Jianping Liu, Xujun Su, Siyi Huang, Aiqin Tian, Wei Zhou, Lingrong Jiang, Masao Ikeda, Hui Yang

Subjects: “…GaN…”
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GaN/AlGaN photonic crystal narrowband thermal emitters on a semi-transparent low-refractive-index substrate by Dongyeon Daniel Kang, Takuya Inoue, Takashi Asano, Susumu Noda

“…We demonstrate a GaN/AlGaN photonic crystal thermal emitter supported by a semi-transparent low-refractive-index substrate for mid-wavelength infrared operation. …”
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Manipulation of Photoelectrochemical Water Splitting by Controlling Direction of Carrier Movement Using InGaN/GaN Hetero-Structure Nanowires by Siyun Noh, Jaehyeok Shin, Yeon-Tae Yu, Mee-Yi Ryu, Jin Soo Kim

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Improving Emission Uniformity of InGaN/GaN-Based Vertical LEDs by Using Reflective ITO/Ag n-Contact by Woong-Sun Yum, Ji-Hyun Koo, Dae-Hee Lee, Young-Hoon Kim, Young-Kyu Jeong, Se-Yeon Jung, Sang-Youl Lee, Hwan-Hee Jeong, Tae-Yeon Seong

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Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics by Maksym Dub, Pavlo Sai, Maciej Sakowicz, Lukasz Janicki, Dmytro B. But, Paweł Prystawko, Grzegorz Cywiński, Wojciech Knap, Sergey Rumyantsev

Subjects: “…AlGaN/GaN…”
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