Hot phonons and non-thermal carrier states in GaN gan Kyhm, K, Taylor, R, O'Sullivan, E, Ryan, J, Cain, N, Roberts, V, Roberts, J, Rota, L

“...Non-thermal carrier states at early times are studied using femtosecond pump-probe spectroscopy in GaN. After the residual chirp on the continuum probe is removed, the normalized difference spectra (NDS) for different probe energies are synchronized, recovering the full time resolution of our laser pulse (120 fs). ...”

Three-photon excitation of InGaN quantum dots gan Villafane, V, Scaparra, B, Rieger, M, Zhu, T, Taylor, RA

“...Finally, we exploit this technique to probe intrinsic properties of InGaN quantum dots. In contrast to non-resonant excitation, slow relaxation of charge carriers is avoided which allows us to measure directly the radiative lifetime of the lowest energy exciton states. ...”

Dynamics and gain in highly-excited InGaN MQWs gan Taylor, R, Kyhm, K, Smith, J, Rice, J, Ryan, J, Someya, T, Arakawa, Y

Dynamics and gain in highly-excited InGaN MQWs gan Taylor, R, Kyhm, K, Smith, J, Rice, J, Ryan, J, Someya, T, Arakawa, Y

PA-MBE GaN-Based Optoelectronics on Silicon Substrates gan Chuah , Lee Siang

“...Dalam penyelidikan ini, epitaksi alur molekul berbantukan plasma nitrogen frekuensi radio (RF) digunakan untuk menumbuhkan bahan galium nitrid (GaN) di atas substrat Si(111) dengan penggunaan aluminium nitrid (AlN) yang ditumbuhkan pada suhu tinggi sebagai lapisan penimbal. ...”
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ارتقاء عامل پارسل نانوآنتن‌های پاپیونی پلاسمونیکی برای گسیلنده‌های نقطۀ کوآنتومی InGaN/GaN در باند سبز gan محمد صباییان, نرگس عجم گرد, مهدی حیدری

“...در این مقاله، نانو‌آنتن‌های پلاسمونیکی پاپیونی (به‌صورت دو منشور مقابل هم) برای ارتقاء میدان الکتریکی و عامل پارسل گسیلنده‌های نقطۀ کوآنتومی InGaN/GaN در منطقۀ سبز طراحی شدند. برای این کار، ابتدا فلزات طلا، نقره، مس و آلومینیوم بررسی شدند. ...”
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Numerical Investigation on the Performance Enhancement of InGaN/GaN Light-Emitting Diodes with a Novel p-i-n Electron-Blocking Layer gan Jun Wang, Tian Wang

“...In this study, we propose a novel p-i-n AlGaN electron-blocking layer for GaN-based LEDs. ...”
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Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study gan Jun-Ho Lee, Jun-Hyeok Choi, Woo-Seok Kang, Dohyung Kim, Byoung-Gue Min, Dong Min Kang, Jung Han Choi, Hyun-Seok Kim

Pynciau: “...GaN...”
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Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress gan Surya Elangovan, Edward Yi Chang, Stone Cheng

Pynciau: Cael y testun llawn

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications gan Ming-Wen Lee, Cheng-Wei Chuang, Francisco Gamiz, Edward-Yi Chang, Yueh-Chin Lin

“...In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching patterns (OEPs) “fabricated to improve device radio frequency (RF) performance for Ka-band applications” are reported. ...”
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Effect of Rapid Thermal Annealing Conditions on the Specific Resistance of the Ohmic Contacts of Ti/Al/Ni/Au Metallization to the GaN/AlGaN Heterostructure gan A. D. Yunik, J. A. Solovjov

“...Effect of rapid thermal annealing conditions on the specific resistance of the ohmic contacts of Ti/Al/Ni/Au metallization with layer thicknesses of 20/120/40/40 nm to the GaN/AlGaN heterostructure with a two-dimensional electron gas on a sapphire substrate has been discovered by transmission line measurement. ...”
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E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology gan Li-Fang Jia, Lian Zhang, Jin-Ping Xiao, Zhe Cheng, De-Feng Lin, Yu-Jie Ai, Jin-Chao Zhao, Yun Zhang

Pynciau: “...AlGaN/GaN...”
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Erratum to: Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well gan Lü Yan-Wu, Wang Jun, Liu Xiang-Lin, Yang Shao-Yan, Zhu Qin-Sheng, Wang Zhan-Guo

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Mutually Injection Locked Multi-Element Terahertz Oscillator Based on AlGaN/GaN High Electron Mobility Avalanche Transit Time Devices gan Partha Banerjee, Aritra Acharyya, Rajib Das, Arindam Biswas, Anup Kumar Bhattacharjee, Saurav Mallik, Haya Mesfer Alshahrani, E. Elshiekh, Mohamed Abbas, Ben Othman Soufiene

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Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current Spreading gan Le Chang, Yen-Wei Yeh, Sheng Hang, Kangkai Tian, Jianquan Kou, Wengang Bi, Yonghui Zhang, Zi-Hui Zhang, Zhaojun Liu, Hao-Chung Kuo

“...Abstract Owing to high surface-to-volume ratio, InGaN-based micro-light-emitting diodes (μLEDs) strongly suffer from surface recombination that is induced by sidewall defects. ...”
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Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications gan Wei-Chih Cheng, Fanming Zeng, Minghao He, Qing Wang, Mansun Chan, Hongyu Yu

Pynciau: Cael y testun llawn

High-Sensitivity pH Sensor Based on Coplanar Gate AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor gan Seong-Kun Cho, Won-Ju Cho

Pynciau: “...AlGaN/GaN MOS HEMT...”
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Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs gan Mingyan Wang, Yuanjie Lv, Heng Zhou, Peng Cui, Zhaojun Lin

Pynciau: Cael y testun llawn

On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs gan Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Giovanni Verzellesi

Pynciau: “...GaN power HEMTs...”
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Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier gan Ji, Yun, Zhang, Zi-Hui, Tan, Swee Tiam, Ju, Zhengang, Kyaw, Zabu, Hasanov, Namig, Liu, Wei, Sun, Xiaowei, Demir, Hilmi Volkan

“...We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. ...”
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