On the hole accelerator for III-nitride light-emitting diodes by Zhang, Zi-Hui, Zhang, Yonghui, Bi, Wengang, Geng, Chong, Xu, Shu, Demir, Hilmi Volkan, Sun, Xiao Wei

“…In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-AlxGa1−xN heterojunction) with different designs, including the AlN composition in the p-AlxGa1−xN layer, and the thickness for the p-GaN layer and the p-AlxGa1−xN layer. …”
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Effect of switching frequency on efficiency in wide bandgap based drive systems by Cooke, M, Rogers, DJ

“…For the selected drive system parameters, the switching frequencies that minimise the overall system losses for Si, SiC, and GaN based inverters are found. The reduction in switching losses of SiC and GaN over Si result in an increase in the optimum switching frequency, from 4 kHz to 11 kHz and 20 kHz respectively.…”

Phonon screening of excitons in atomically thin semiconductors by Lee, W, Alvertis, AM, Li, Z, Louie, SG, Filip, MR, Neaton, JB, Kioupakis, E

“…We focus on atomically thin GaN quantum wells embedded in AlN and identify specific phonons in the surrounding material, AlN, that dramatically alter the lowest-lying exciton in monolayer GaN via screening. …”

A high power driver IC for electroluminescent panel: design challenges and advantages of using the emerging LEES-SMART GAN-on-CMOS process by Jia, Zhou, Ge, Tong, Guo, Linfei, Eileen, Ng Pei Jian, He, Huiqiao, Chang, Joseph

“…In this paper, a novel high power EL driver IC based on the emerging LEES-SMART GaN-on-CMOS process are presented and we show that this integrated class-D EL driver is advantageous compared to EL driver IC based on state-of-the-art silicon IC process.…”
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Impedance and parasitic capacitance analysis of SiC MOSFETs by Tan, Wei Jie

“…Both GaN and SiC are wide bandgap technologies, which means they provide faster switching speeds and higher breakdown voltages than IGBTs and power MOSFETs. …”
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Phononic and structural response to strain in wurtzite-gallium nitride nanowires by Loh, G. C., Teo, Edwin Hang Tong, Tay, Beng Kang

“…Gallium nitride (GaN) nanowires exist in a myriad of cross-sectional shapes. …”
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Three-photon excitation of quantum two-level systems by Villafane, V, Scaparra, B, Rieger, M, Appel, S, Trivedi, R, Oliver, RA, Taylor, RA, Finley, JJ, Müller, K

“…We demonstrate that a two-level system, in form of an InGaN quantum dot, can only be efficiency excited using an odd number of photons (1 or 3) while resonant two-photon excitation is strongly suppressed.…”

Design and Performance Comparison of Multi-Frequency Inductors for Megahertz Wireless Power Transfer by Yang, Rachel S., Nikiforidis, Ioannis, Pucci, Nunzio, Joisher, Mansi V., Wagle, Prateek, Mitcheson, Paul D., Perreault, David J.

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Condensed Buck-Boost Switched Capacitor Converter for Efficient Voltage Distribution in Electrified Aircraft by Aron, Aklilu

“…In order to be implemented in hardware for the first time, this work utilize new monolithic, bidirectional GaN FETs, whose reverse voltage blocking capabilities open new possibilities for a converter design that wastes less power and occupies less board area. …”
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Ferromagnetic copper-doped ZnO for spintronics by Herng, Tun Seng

“…Several heterostructures LEDs have been fabricated using the ZnO:Cu as an electron injector and a p-type GaN as hole injector. Electroluminescent from these LEDs can be detected.…”
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Blue shift in photoluminescene of semiconductor nanostructures by Khin, San Thit.

“…Because of band gap expands with reducing particle size, which gives rise to the blue shift in the photoluminescence (PL) and photoabsorbance of nanometric semiconductors such as Si, Si oxides, III-VI semiconductor (GaN, GaP, GaAs, InP and InAs) and II-Vl semiconductor (CdS, CdSe, CdTe, ZnS, ZnSe and ZnTe) compounds. …”
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Remote epitaxial interaction through graphene by Chang, Celesta S, Kim, Ki Seok, Park, Bo-In, Choi, Joonghoon, Kim, Hyunseok, Jeong, Junseok, Barone, Matthew, Parker, Nicholas, Lee, Sangho, Zhang, Xinyuan, Lu, Kuangye, Suh, Jun Min, Kim, Jekyung, Lee, Doyoon, Han, Ne Myo, Moon, Mingi, Lee, Yun Seog, Kim, Dong-Hwan, Schlom, Darrell G, Hong, Young Joon, Kim, Jeehwan

“…Macroscopically, we also show variations in the density of GaN microcrystal arrays that depend on the ionicity of substrates and the number of graphene layers.…”
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Communication satellite power amplifiers: current and future SSPA and TWTA technologies by Aniceto, Raichelle, Cahoy, Kerri, Lohmeyer, Whitney

“…This study captures the state of current satellite transponder technology, specifically, solid-state power amplifiers (SSPAs) and traveling wave tube amplifiers (TWTAs), and describes expected future advances, including GaN SSPAs. The findings of five previous SSPA and TWTA studies, including the 1991 European Space and Technology Center study, the 1993 National Aeronautics and Space Administration study, and three Boeing studies conducted in 2005, 2008, and 2013, are tabulated and summarized. …”
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Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate by Tan, K. H., Loke, W. K., Wicaksono, S., Li, D., Leong, Y. R., Yoon, S. F., Sharma, P., Milakovich, T., Bulsara, M. T., Fitzgerald, E. A.

“…For comparison, the performance of a similar 1 eV GaN0.018As0.897 Sb 0.085 photovoltaic cell grown on a GaAs substrate was also reported. …”
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The role of polarity in nonplanar semiconductor nanostructures by de la Mata, María, Zamani, Reza R., Martí-Sánchez, Sara, Eickhoff, Martin, Xiong, Qihua, Fontcuberta i Morral, Anna, Caroff, Philippe, Arbiol, Jordi

“…The present study has been extended over a wide range of semiconductor compounds, covering the most commonly synthesized III-V (GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb) and II-VI (ZnO, ZnTe, CdS, CdSe, CdTe) nanowires and other free-standing nanostructures (tripods, tetrapods, belts, and membranes). …”
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Room temperature solid-state quantum emitters in the telecom range by Zhou, Yu, Wang, Ziyu, Rasmita, Abdullah, Kim, Sejeong, Berhane, Amanuel, Bodrog, Zoltán, Adamo, Giorgio, Gali, Adam, Aharonovich, Igor, Gao, Wei-bo

“…The emission is attributed to localized defects in a gallium nitride (GaN) crystal. The high-performance SPEs embedded in a technologically mature semiconductor are promising for on-chip quantum simulators and practical quantum communication technologies.…”
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Design and evaluation of a reconfigurable stacked active bridge dc/dc converter for efficient wide load-range operation by Afridi, Khurram K., Abramson, Rose A., Gunter, Samantha Joellyn, Otten, David M, Perreault, David J

“…A 175 kHz, 300 W, 380 V to 12 V GaN-based prototype converter achieves 95.9% efficiency at full load, a peak efficiency of 97.0%, an efficiency above 92.7% down to 10% load and an efficiency above 79.8% down to 3.3% load.…”
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Current status and future prospects of copper oxide heterojunction solar cells by Wong, Terence Kin Shun, Zhuk, Siarhei, Masudy-Panah, Saeid, Dalapati, Goutam K.

“…Finally, early stage study of Cu4O3/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10−2%.…”
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3.3–4.3 GHz efficient continuous class-F gallium nitride power amplifier based on simplified real frequency technique and harmonic tuning by Sadeque, Golam, Yusoff, Zubaida, Roslee, Mardeni, Hashim, Shaiful Jahari, Mohd Marzuki, Azah Syafiah, Lees, Jonathan, Zubir, Farid, Al-Bawri, Samir Salem

“…The load-pull and source-pull is applied at multiple points for 100 MHz intervals over the bandwidth to obtain the optimum impedances at the output and input of the 10W Gallium Nitride (GaN) Cree CGH40010F device. To verify the design, the RFPA is simulated, and the performance is measured between 3.3 and 4.3 GHz. …”
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Electronic structures of topological materials studied by angle-resolved photoemission spectroscopy by He, S

“…ScN is a promising material for thermal energy conversion and an ideal substrate for growing high-quality, dislocation-free GaN films. In this project, I investigated the overall electronic structures of ScN using high-resolution ARPES . …”