Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures by Grzegorz Ilgiewicz, Wojciech Macherzynski, Joanna Prazmowska-Czajka, Andrzej Stafiniak, Regina Paszkiewicz

“…Development of semiconductor devices based on AlGaN/GaN heterostructure requires study and improvement of ohmic contacts, whose necessary improvement lies in process of checking new metallic compositions and thermal formation process parameters. …”
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AlGaN/GaN pressure sensor with a Wheatstone bridge structure by X. Tan, Y. J. Lv, X. Y. Zhou, Y. G. Wang, X. B. Song, G. D. Gu, P. F. Ji, X. L. Yang, B. Shen, Z. H. Feng, S. J. Cai

“…In this work, a Wheatstone bridge-type pressure sensor based on AlGaN/GaN heterostructure was fabricated for the first time. …”
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Ohmic Contact to n-GaN Using RT-Sputtered GaN:O by Monika Maslyk, Pawel Prystawko, Eliana Kaminska, Ewa Grzanka, Marcin Krysko

Subjects: “…GaN…”
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p-GaN Platform for Next-Generation GaN Complementary Transistors and Circuits by Xie, Qingyun

“…Notably, the lack of a monolithically integrated GaN complementary technology impedes the advancement of GaN power ICs. …”
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Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs by Gao, Feng, Ph. D. Massachusetts Institute of Technology

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Processing technology for high quality AlGaN/GaN MOSHEMT interfaces by Saadat, Omair I

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A hole modulator for InGaN/GaN light-emitting diodes by Zhang, Zi-Hui, Kyaw, Zabu, Liu, Wei, Ji, Yun, Wang, Liancheng, Tan, Swee Tiam, Sun, Xiao Wei, Demir, Hilmi Volkan

“…The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. …”
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Studies of GaN-on-GaN vertical Schottky diodes for radiation sensing applications by Sandupatla, Abhinay

“…Recently, researchers are exploring radiation sensing as a probable application for GaN devices on the virtue of the high Displacement Energy (ED) of GaN (20 eV) which is twice higher than any other semiconductors such as GaAs and Si. …”
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Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors by Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ing, Ng Geok, Nitta, Shugo, Kennedy, John, Amano, Hiroshi

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AlGaN/GaN HEMT based gas sensor characterisation and measurement by Ng, Ting Siang

“…The variation of concentration of free carrier charge in 2DEG channel caused by changes in environmental condition inducing overall resistance change is the principle behind AlGaN/GaN based gas sensing. In this report, the epilayer of AlGaN/GaN epistructure was grown on Si substrate by MOCVD. …”
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The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs by Yuan, Li, Wang, Weizhu, Lo, Guo-Qiang, Lee, Kean Boon, Sun, Haifeng, Selvaraj, Susai Lawrence, Zhou, Xing

“…In this work, the temperature dependent TCAD and SPICE modeling platform of AlGaN/GaN HEMTs has been established by using Sentaurus TCAD and Silvaco UTMOST IV. …”
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Electrically driven single InGaN/GaN quantum dot emission by Jarjour, A, Taylor, R, Oliver, R, Kappers, M, Humphreys, C, Tahraoui, A

Two-photon excitation of asymmetric GaN/AlGaN quantum discs by Lee, K, Na, J, Birner, S, Yi, SN, Taylor, R, Park, Y, Park, C, Kang, T

“…By using two-photon absorption spectroscopy we have performed time-integrated and time-resolved photolurninescence measurements on several coupled asymmetric GaN quantum discs, with embedded AlGaN barriers. …”

Progress in the optical studies of single InGaN/GaN quantum dots by Jarjour, A, Oliver, R, Taylor, R

Efficiency Droop Of InGaN/GaN Led With Different Indium Composition by Samsudin, M. E. A., Alias, E. A., Iza, M., Speck, J. S., Denbaars, S. P., Nakamura, S., Zainal, N.

“…Nevertheless, the majority of InGaN/GaN LEDs suffer from the efficiency droop. This droop would limit the potential of the LEDs in high current applications. …”
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AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer by Xinke Liu, Hong Gu, Kuilong Li, Lunchun Guo, Deliang Zhu, Youming Lu, Jianfeng Wang, Hao-Chung Kuo, Zhihong Liu, Wenjun Liu, Lin Chen, Jianping Fang, Kah-Wee Ang, Ke Xu, Jin-Ping Ao

“…This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. …”
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High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition by Yang Wang, Gaoqiang Deng, Jie Ji, Haotian Ma, Shixu Yang, Jiaqi Yu, Yunfei Niu, Yusen Wang, Chao Lu, Yang Liu, Ke Tang, Wei Guo, Baolin Zhang, Yuantao Zhang

“…In this work, unintentionally doped N-polar GaN films were grown on sapphire substrates by metalorganic chemical vapor deposition. …”
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Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps by Yu-Lin Song, Manoj Kumar Reddy, Luh-Maan Chang, Gene Sheu

Subjects: “…GaN/AlGaN/GaN…”
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Performance of InGaN/GaN Light Emitting Diodes with n-GaN Layer Embedded with SiO2 Nano-Particles by Hong-Seo Yom, Jin-Kyu Yang, Alexander Y. Polyakov, In-Hwan Lee

“…We demonstrate high-performance InGaN/GaN blue light emitting diodes (LEDs) embedded with an air-void layer produced by a dry-etch of nano-pillars in an n-GaN layer grown on patterned sapphire substrate (PSS), filling the space between nano-pillars with SiO2 nano-particles (NPs) and subsequent epitaxial overgrowth. …”
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Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate by Isra Mahaboob, Michael Yakimov, Kasey Hogan, Emma Rocco, Sean Tozier, F. Shahedipour-Sandvik

Subjects: “…AlGaN/GaN HEMT…”
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