High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers by Junji Kotani, Kozo Makiyama, Toshihiro Ohki, Shiro Ozaki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Norikazu Nakamura, Yasuyuki Miyamoto

“…Abstract This paper investigated the back‐barrier (BB) effect for gallium nitride (GaN)‐based high‐electron‐mobility transistors with an Fe‐doped buffer and Fe‐buffer + Indium gallium nitride (InGaN)‐BB structure. …”
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Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication by Hyeon-Ji Kim, Jun-Hyeok Yim, Hyungtak Kim, Ho-Young Cha

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Experimental demonstration of a two-dimensional hole gas in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy by Méchin, Loïc, Médard, François, Leymarie, Joël, Bouchoule, Sophie, Duboz, Jean-Yves, Alloing, Blandine, Zuñiga-Pérez, Jesús, Disseix, Pierre

“…The objective of this article is to demonstrate, thanks to the combination of various optical spectroscopy techniques coupled to numerical simulations, the presence of a two-dimensional hole gas in a GaN/AlGaN/GaN heterostructure. This is made possible thanks to a GaN/AlGaN/GaN heterostructure displaying a micrometer-thick AlGaN layer and a GaN cap thicker than in conventional GaN-based HEMTs structures. …”
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Nanostructured GaN transistors by Chowdhury, Nadim, Palacios, Tomas

“…This paper describes how the use of nanostructures can significantly increase the performance of GaN transistors. 100-400 nm fins have been defined underneath the gate electrode of AlGaN/GaN transistors to increase the gate modulation efficiency of these devices and to allow for the tuning of the threshold voltage. …”
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GaN power electronics by Lu, Bin, Piedra, Daniel, Palacios, Tomas

“…This paper describes how the unique properties of GaN enables a new generation of power transistors has the potential to reduce by at least an order of magnitude the cost, volume and losses of power electronic systems. …”
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GaN converter demonstrator by Villarama, Joseph Christian Aguilar

“…This report explores how GaN wide-band gap semiconductors perform in high power environments and as a result, whether it can be used in aerospace applications. …”
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Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode by Haitao Zhang, Xuanwu Kang, Yingkui Zheng, Hao Wu, Ke Wei, Xinyu Liu, Tianchun Ye, Zhi Jin

Subjects: “…GaN…”
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Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure by Bhishma Pandit, E. Fred Schubert, Jaehee Cho

“…Abstract A dual-functional ultraviolet (UV) photodetector with a large UV-to-visible rejection ratio is presented, in which interdigitated finger-type two-dimensional graphene electrodes are introduced to an AlGaN/GaN heterostructure. Two photocurrent generation mechanisms of photovoltaic and photoconductive dominances coexist in the device. …”
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An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED by Sarai Zarate-Galvez, Abel Garcia-Barrientos, Roberto Ambrosio-Lazaro, Mario Garcia-Ramirez, Enrique Stevens-Navarro, Jairo Plaza-Castillo, Jose Hoyo-Montaño, Obed Perez-Cortes

Subjects: “…InGaN/GaN…”
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Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning by J. He, Y. Q. Chen, Z. Y. He, Y. F. En, C. Liu, Y. Huang, Z. Li, M. H. Tang

Subjects: “…GaN HEMT…”
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Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices by James (Zi-Jian) Ju, Bo Sun, Georg Haunschild, Bernhard Loitsch, Benedikt Stoib, Martin S. Brandt, Martin Stutzmann, Yee Kan Koh, Gregor Koblmüller

“…The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL) grown by molecular beam epitaxy are investigated. …”
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Effect of spontaneous polarization field on diffusion thermopower in AlGaN/GaN heterostructures by Bommalingaiah B．, Narayan Gaonkar, R.G. Vaidya

“…Polarization field on diffusion thermopower Sd, of a two-dimensional electron gas (2DEG) formed at a wurtzite AlGaN/GaN heterojunction is investigated. The investigations of macroscopic polarization effect on diffusion thermopower over the wide range of temperature and barrier fluctuations bring out the role of spontaneous and piezoelectric polarization fields present in the heterostructure. …”
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The Role of GaN in the Heterostructure WS₂/GaN for SERS Applications by Tsung-Shine Ko, En-Ting Lin, Yen-Teng Ho, Chen-An Deng

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Low-Power AlGaN/GaN Triangular Microcantilever for Air Flow Detection by Balaadithya Uppalapati, Durga Gajula, Manav Bava, Lavanya Muthusamy, Goutam Koley

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Efficiency Boosting by Thermal Harvesting in InGaN/GaN Light-Emitting Diodes by Shunpeng Lu, Yiping Zhang, Ying Qiu, Xiao Liu, Menglong Zhang, Dongxiang Luo, Dongxiang Luo

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Thermal Characterization and Modelling of AlGaN-GaN Multilayer Structures for HEMT Applications by Lisa Mitterhuber, René Hammer, Thomas Dengg, Jürgen Spitaler

Subjects: “…AlGaN-GaN HEMT…”
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Progress and Challenges of InGaN/GaN-Based Core–Shell Microrod LEDs by Johanna Meier, Gerd Bacher

Subjects: “…GaN…”
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Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings by Tsung-Han Yang, Houqiang Fu, Kai Fu, Chen Yang, Jossue Montes, Xuanqi Huang, Hong Chen, Jingan Zhou, Xin Qi, Xuguang Deng, Yuji Zhao

“…Vertical GaN Schottky barrier diodes (SBDs) with floating metal rings (FMRs) as edge termination structures have been fabricated on bulk GaN substrates. …”
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Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs by Jeong-Gil Kim, Eunjin Kim, Dong-Seok Kim, Chuyoung Cho, Jung-Hee Lee

Subjects: “…AlGaN/GaN…”
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Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs by Liang Song, Kai Fu, Jie Zhao, Guohao Yu, Ronghui Hao, Xiaodong Zhang, Fu Chen, Yaming Fan, Yong Cai, Baoshun Zhang

“…The optimal annealing temperature is affected by Al and Au thickness and AlGaN thickness. The etched AlGaN barrier is useful to achieve good ohmic contact (0.24 Ω·mm) with a low annealing temperature. …”
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