On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes by Kyaw, Zabu, Zhang, Zi-Hui, Liu, Wei, Tan, Swee Tiam, Ju, Zhen Gang, Zhang, Xue Liang, Ji, Yun, Hasanov, Namig, Zhu, Binbin, Lu, Shunpeng, Zhang, Yiping, Sun, Xiao Wei, Demir, Hilmi Volkan

“…N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. …”
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Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer by Sun, Xiaowei, Zhang, Zi-Hui, Tan, Swee Tiam, Liu, Wei, Ju, Zhengang, Zheng, Ke, Kyaw, Zabu, Ji, Yun, Hasanov, Namig, Demir, Hilmi Volkan

“…This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. …”
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Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata by Zhang, Zi-Hui, Tan, Swee Tiam, Liu, Wei, Ju, Zhengang, Zheng, Ke, Kyaw, Zabu, Ji, Yun, Hasanov, Namig, Sun, Xiaowei, Demir, Hilmi Volkan

“…The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].…”
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Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT by Hideyuki Itakura, Toshihumi Nomura, Naoki Arita, Narihito Okada, Christian M. Wetzel, T. Paul Chow, Kazuyuki Tadatomo

“…The impact of an InGaN/GaN superlattice (SL) on AlGaN/GaN high electron mobility transistor characteristics was investigated, and two effects were discovered: one is a substantial improvement in the conduction characteristics as a result of the InGaN/GaN channel layer, while the other is the effect of diffusion suppression relating to impurities or point defects from the carbon-doped layer. …”
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Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes by Liwen Cheng, Zhenwei Li, Jiayi Zhang, Xingyu Lin, Da Yang, Haitao Chen, Shudong Wu, Shun Yao

Subjects: “…InGaN–GaN–InGaN delta barriers…”
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MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template by Haruka Matsuura, Takeyoshi Onuma, Masatomo Sumiya, Tomohiro Yamaguchi, Bing Ren, Meiyong Liao, Tohru Honda, Liwen Sang

Subjects: “…InGaN/GaN…”
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Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs by Tzu-Hsuan Chang, Kanglin Xiong, Sung Hyun Park, Ge Yuan, Zhenqiang Ma, Jung Han

“…This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). …”
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Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer by Ju, Zhen Gang, Liu, Wei, Zhang, Zi-Hui, Tan, Swee Tiam, Ji, Yun, Kyaw, Zabu, Zhang, Xue Liang, Lu, Shun Peng, Zhang, Yi Ping, Zhu, Bin Bin, Hasanov, Namig, Sun, Xiao Wei, Demir, Hilmi Volkan

Subjects: “…GaN; LED; QW; EBL; MOCVD…”
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Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs by Ki-Sik Im, Jae-Hoon Lee, Yeo Jin Choi, Sung Jin An

Subjects: “…AlGaN/GaN…”
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Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells by Anthonin Delphan, Maxim N. Makhonin, Tommi Isoniemi, Paul M. Walker, Maurice S. Skolnick, Dmitry N. Krizhanovskii, Dmitry V. Skryabin, Jean-François Carlin, Nicolas Grandjean, Raphaël Butté

“…Here, we report polariton lasing in the UV spectral range in microring resonators based on GaN/AlGaN slab waveguides, with experiments carried out from 4 K up to room temperature. …”
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Graphene/AlGaN/GaN RF Switch by Yevhen Yashchyshyn, Paweł Bajurko, Jakub Sobolewski, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Paweł Prystawko, Maksym Dub, Wojciech Knap, Sergey Rumyantsev, Grzegorz Cywiński

Subjects: “…AlGaN/GaN…”
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Growth modes in heteroepitaxy of InGaN on GaN by Oliver, R, Kappers, M, Humphreys, C, Briggs, G

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs by Hanghang Lv, Yanrong Cao, Maodan Ma, Zhiheng Wang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Ling Lv, Xuefeng Zheng, Yongkun Wang, Wenchao Tian, Xiaohua Ma

Subjects: “…AlGaN/GaN HEMTs…”
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Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier by Palacios, Tomas, Killat, Nicole, Tapajna, Milan, Faqir, Mustapha, Kuball, Martin

“…Electroluminescence (EL) spectroscopy in combination with drift-diffusion simulations was used to prove the presence of impact ionisation in AlGaN/GaN HEMTs illustrated on InGaN back-barrier devices. …”
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On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes by Zhang, Xueliang, Kyaw, Zabu, Zhang, Zi-Hui, Liu, Wei, Tan, Swee Tiam, Ju, Zhengang, Ji, Yun, Hasanov, Namig, Zhu, Binbin, Lu, Shunpeng, Zhang, Yiping, Sun, Xiao Wei, Demir, Hilmi Volkan

“…Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. …”
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Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers by Park, Y, Holmes, M, Taylor, R, Lee, S, Jeon, S, Yoon, I, Shon, Y

“…We investigated the carrier transition properties of the GaN/InGaN/GaN single quantum well bounded by AlGaN barriers. …”

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer by Dmitri S. Arteev, Alexei V. Sakharov, Wsevolod V. Lundin, Evgenii E. Zavarin, Andrey E. Nikolaev, Andrey F. Tsatsulnikov, Viktor M. Ustinov

Subjects: “…GaN…”
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High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN by Gwen Rolland, Christophe Rodriguez, Guillaume Gommé, Abderrahim Boucherif, Ahmed Chakroun, Meriem Bouchilaoun, Marie Clara Pepin, Faissal El Hamidi, Soundos Maher, Richard Arès, Tom MacElwee, Hassan Maher

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Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices by Tadao Hashimoto, Edward R. Letts, Daryl Key

Subjects: “…bulk GaN…”
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Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs by Maodan Ma, Yanrong Cao, Hanghang Lv, Zhiheng Wang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao

Subjects: “…AlGaN/GaN HEMTs…”
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