Showing 1 - 10 results of 10 for search '"HfZrO"', query time: 0.76s Refine Results
  1. 1
    A Kinetic Pathway to Orthorhombic HfZrO<sub/><sub/><sub/>

    A Kinetic Pathway to Orthorhombic HfZrO<sub/><sub/><sub/> by Guan-Hua Chen, Yu-Rui Chen, Zefu Zhao, Jia-Yang Lee, Yun-Wen Chen, Yifan Xing, Rachit Dobhal, C. W. Liu

    Published 2023-01-01
    Subjects: “…Hf₀.₅Zr₀.₅O₂…”
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  2. 2
    Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> Diodes

    Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> Diodes by Kuo-Yu Hsiang, Chun-Yu Liao, Jer-Fu Wang, Zhao-Feng Lou, Chen-Ying Lin, Shih-Hung Chiang, Chee-Wee Liu, Tuo-Hung Hou, Min-Hung Lee

    Published 2021-10-01
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  3. 3
    The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La films

    The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La films by Timofey V. Perevalov, Igor P. Prosvirin, Evgenii A. Suprun, Furqan Mehmood, Thomas Mikolajick, Uwe Schroeder, Vladimir A. Gritsenko

    Published 2021-12-01
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  4. 4
    Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

    Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement by Bong Ho Kim, Song‐Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon‐Je Suh, Jaeyong Jeong, Dae‐Myeong Geum, Seung‐Hyub Baek, Sang Hyeon Kim

    Published 2023-05-01
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  5. 5
    Ferroelectric Switching in Trilayer Al<sub>2</sub>O<sub>3</sub>/HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> Structure

    Ferroelectric Switching in Trilayer Al<sub>2</sub>O<sub>3</sub>/HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> Structure by Solyee Im, Seung-Youl Kang, Yeriaron Kim, Jeong Hun Kim, Jong-Pil Im, Sung-Min Yoon, Seung Eon Moon, Jiyong Woo

    Published 2020-09-01
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  6. 6
    Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of HfxZr1‐xO2 Thin Film

    Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of HfxZr1‐xO2 Thin Film by Minhyun Jung, Seungyeob Kim, Junghyeon Hwang, Hye Jin Kim, Yunjeong Kim, Jinho Ahn, Sanghun Jeon

    Published 2024-02-01
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  7. 7
    Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter

    Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter by Po-Jung Sung, Chun-Jung Su, Shih-Hsuan Lo, Fu-Kuo Hsueh, Darsen D. Lu, Yao-Jen Lee, Tien-Sheng Chao

    Published 2020-01-01
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  8. 8
    2-Bit/Cell Operation of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Based FeFET Memory Devices for NAND Applications

    2-Bit/Cell Operation of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Based FeFET Memory Devices for NAND Applications by Binjian Zeng, Min Liao, Qiangxiang Peng, Wenwu Xiao, Jiajia Liao, Shuaizhi Zheng, Yichun Zhou

    Published 2019-01-01
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  9. 9
    Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode

    Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode by Cheng-Hung Wu, Kuan-Chi Wang, Yu-Yun Wang, Chenming Hu, Chun-Jung Su, Tian-Li Wu

    Published 2022-01-01
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  10. 10
    Uniform Oxide Layer Integration in Amorphous IGZO Thin Film Transistors for Enhanced Multilevel-Cell NAND Memory Performance

    Uniform Oxide Layer Integration in Amorphous IGZO Thin Film Transistors for Enhanced Multilevel-Cell NAND Memory Performance by Zeyang Xiang, Kexiang Wang, Jie Lu, Zixuan Wang, Huilin Jin, Ranping Li, Mengrui Shi, Liuxuan Wu, Fuyu Yan, Ran Jiang

    Published 2024-03-01
    Subjects: “…hafnium-zirconium oxide (HfZrO)…”
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