Plasmonic hot-electron assisted phase transformation in 2D-MoS2 for the hydrogen evolution reaction: current status and future prospects by Uttam, Sharma, Smagul, Karazhanov, Rajan, Jose, Santanu, Das

“…The structure and properties of the two phases of 2D-MoS2, their synthesis, mechanisms, and characteristics of phase transitions with or without plasmonic nanostructures are thoroughly discussed for their application as an electrocatalyst for the HER. Plasmonic hot electron-assisted 2H to 1T phase transformation in 2D-MoS2 provides enormous opportunities in producing hydrogen efficiently via water splitting. …”
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Simulation of 0.18 micron MOSFET and its characterization by Ahmad Radzi, Syafeeza

“…The most common effect that generally occurs in the short channel MOSFETs are channel modulation, drain induced barrier lowering (DIBL), punch-through and hot electron effect. Several advanced method such as lightly-doped drain (LDD), halo implant and retrograde well is applied to reduce the short channel effects. …”
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Schottky Barrier and Surface Plasmonic Resonance Phenomena Towards the Photocatalytic Reaction: Study of Their Mechanisms to Enhance Photocatalytic Activity by Khan, Maksudur R., Chuan, Tan Wooi, Yousuf, Abu, Chowdhury, M. N. K., Cheng, C. K.

“…While SPR has the ability to create an electromagnetic field which can improve the photoreaction in three ways: photon scattering, Plasmon Resonance Energy Transfer (PRET) and hot electron excitation. Although both phenomena have been well grounded throughout the field, one crucial ambiguity is still found based on the proposed mechanisms, specifically, what is the direction of electron flow – from metal to semiconductor or vice versa? …”
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SPICE simulation assisted-dynamic Rds(on) characterization in 200V commercial Schottky p- GaN HEMTs under unstable phases by Liu, Xinzhi, Shafie, Suhaidi, Amran Mohd Radzi, Mohd, Azis, Norhafiz

“…This paper presents a comprehensive analysis of dynamic and static RDS(ON) in Schottky p-GaN High Electron Mobility Transistors (HEMTs), highlighting the impact of offstate and hot electron trapping on device performance. The authors observed significant hysteresis in the transfer characteristics of a 200V commercial Schottky p-GaN, attributing this to charge trapping effects. …”
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