An efficient and effective design of InP nanowires for maximal solar energy harvesting by Wu, Dan, Tang, Xiaohong, Wang, Kai, He, Zhubing, Li, Xianqiang

Subjects: “…III–V Semiconductor Materials…”
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An Efficient and Effective Design of InP Nanowires for Maximal Solar Energy Harvesting by Dan Wu, Xiaohong Tang, Kai Wang, Zhubing He, Xianqiang Li

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Comprehensive n- and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects by Raseong Kim, Uygar E. Avci, Ian A. Young

Subjects: “…III-V semiconductor materials…”
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The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs by P. Huang, Q. H. Luc, A. Sibaja-Hernandez, H. L. Ko, J. Y. Wu, N. A. Tran, N. Collaert, E. Y. Chang

Subjects: “…III-V semiconductor materials…”
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A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs by Yonghao Jia, Zhang Wen, Yongbo Chen, Cheng-Cheng Xie, Yong-Xin Guo, Yuehang Xu

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Vertical InAs-Si Gate-All-Around Tunnel FETs Integrated on Si Using Selective Epitaxy in Nanotube Templates by Davide Cutaia, Kirsten E. Moselund, Mattias Borg, Heinz Schmid, Lynne Gignac, Chris M. Breslin, Siegfried Karg, Emanuele Uccelli, Heike Riel

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Processing and Characterization of Monolithic Passive-Matrix GaN-Based MicroLED Arrays With Pixel Sizes From 5 to 50 µm by Steffen Bornemann, Jan Gulink, Victor Moro, Joan Canals Gil, Stefan Wolter, Georg Schottler, Daria Bezshlyakh, Joan Daniel Prades, Angel Dieguez, Andreas Waag

Subjects: “…III-V semiconductor materials…”
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Asymmetrically and Vertically Coupled Hybrid Si/GaN Microring Resonators for On-Chip Optical Interconnects by B. Thubthimthong, T. Sasaki, K. Hane

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