Showing 1 - 6 results of 6 for search '"Indium gallium arsenide"', query time: 0.39s Refine Results
  1. 1
    Fully Integrated THz Schottky Detectors Using Metallic Nanowires as Bridge Contacts

    Fully Integrated THz Schottky Detectors Using Metallic Nanowires as Bridge Contacts by Ahid S. Hajo, Sascha Preu, Leonid Kochkurov, Thomas Kusserow, Oktay Yilmazoglu

    Published 2021-01-01
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  2. 2
    The first simultaneous spectroscopic and monochromatic imaging observations of short-wavelength infrared aurora of $$\mathrm {N_{2}^{+}}$$ N 2 +  Meinel (0,0) band at 1.1 $$\mathrm {\mu }$$ μ m with incoherent scatter radar

    The first simultaneous spectroscopic and monochromatic imaging observations of short-wavelength infrared aurora of $$\mathrm {N_{2}^{+}}$$ N 2 +  Meinel (0,0) band at 1.1 $$\mathrm... by Takanori Nishiyama, Masato Kagitani, Senri Furutachi, Yuki Iwasa, Yasunobu Ogawa, Takuo T. Tsuda, Peter Dalin, Fuminori Tsuchiya, Satonori Nozawa, Fred Sigernes

    Published 2024-02-01
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  3. 3
    Real-Time Dynamic 3D Shape Reconstruction with SWIR InGaAs Camera

    Real-Time Dynamic 3D Shape Reconstruction with SWIR InGaAs Camera by Cheng Fei, Yanyang Ma, Shan Jiang, Junliang Liu, Baoqing Sun, Yongfu Li, Yi Gu, Xian Zhao, Jiaxiong Fang

    Published 2020-01-01
    Subjects: “…short-wave infrared indium gallium arsenide camera…”
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  4. 4
    Characterization of High-Performance InGaAs QW-MOSFETs With Reliable Bi-Layer HfO<sub>x</sub>N<sub>y</sub> Gate Stack

    Characterization of High-Performance InGaAs QW-MOSFETs With Reliable Bi-Layer HfO<sub>x</sub>N<sub>y</sub> Gate Stack by Su-Keun Eom, Min-Woo Kong, Ho-Young Cha, Kwang-Seok Seo

    Published 2019-01-01
    Subjects: “…Indium gallium arsenide (InGaAs)…”
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  5. 5
    Competition between Direct Detection Mechanisms in Planar Bow-Tie Microwave Diodes on the Base of InAlAs/InGaAs/InAlAs Heterostructures

    Competition between Direct Detection Mechanisms in Planar Bow-Tie Microwave Diodes on the Base of InAlAs/InGaAs/InAlAs Heterostructures by Algirdas Sužiedėlis, Steponas Ašmontas, Jonas Gradauskas, Aurimas Čerškus, Karolis Požela, Maksimas Anbinderis

    Published 2023-01-01
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  6. 6
    High Mobility In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes

    High Mobility In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes by S. Yoshida, H. C. Lin, A. Vais, A. Alian, J. Franco, S. El Kazzi, Y. Mols, Y. Miyanami, M. Nakazawa, N. Collaert, H. Watanabe, A. Thean

    Published 2017-01-01
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