Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon by Krich, Jacob J., Akey, Austin J., Recht, D., Aziz, Michael J., Sullivan, Joseph T., Simmons, Christie, Buonassisi, Tonio

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Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing by Franta, B, Pastor, D, Gandhi, HH, Rekemeyer, PH, Gradečak, S, Aziz, MJ, Mazur, E

“…Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. …”