Technical digest of the International Electron Devices Meeting by International Electron Devices Meeting (1974-), Institute of Electrical and Electronics Engineers

Design Considerations for Efficient Deep Neural Networks on Processing-in-Memory Accelerators

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Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform by Xie, Qingyun, Yuan, Mengyang, Niroula, John, Greer, James A., Rajput, Nitul S., Chowdhury, Nadim, Palacios, Tomas

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Design Considerations for Efficient Deep Neural Networks on Processing-in-Memory Accelerators by Yang, Tien-Ju, Sze, Vivienne

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Silicon Hard-Stop Spacers for 3D Integration of Superconducting Qubits

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GaN Field Emitter Arrays with JA of 10 A/cm² at V_GE = 50 V for Power Applications by Shih, P.-C., Zheng, T., Arellano-Jimenez, M. J., Gnade, B., Akinwande, A. I., Palacios, T.

“…2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA…”
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CMOS-fabricated ring surface ion trap with TSV integration by Zhao, Peng, Lim, Yu Dian, Li, Hong Yu, Likforman, Jean-Pierre, Guidoni, Luca, Desormeaux, Lilay Gros, Tan, Chuan Seng

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Precision mass measurements in solution reveal properties of single cells and bioparticles by Olcum, Selim A., Cermak, Nathan, Manalis, Scott R

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Self-aligned InGaAs FinFETs with 5-nm fin-width and 5-nm gate-contact separation by Vardi, Alon, Kong, Lisa (Lisa Fanzhen), Lu, Wenjie, Cai, Xiaowei, Zhao, Xin, Grajal de la Fuente, Jesus, del Alamo, Jesus A

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First Demonstration of a Self-Aligned GaN p-FET by Chowdhury, Nadim, Xie, Qingyun, Yuan, Mengyang, Rajput, Nitul S, Xiang, Peng, Cheng, Kai, Then, Han Wui, Palacios, Tomas

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Silicon Hard-Stop Spacers for 3D Integration of Superconducting Qubits by Niedzielski, Bethany M, Kim, David K., Schwartz, Mollie E., Rosenberg, Danna, Calusine, Greg, Das, Rabi, Melville, Alexander J., Plant, Jason J., Racz, Livia, Yoder, Jonilyn Longenecker, Ruth-Yost, Donna, Oliver, William D

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Gigahertz Ambipolar Frequency Multiplier Based on Cvd Graphene by Wang, Han, Hsu, Allen Long, Kim, Ki Kang, Kong, Jing, Palacios, Tomas

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Band-engineered Ge-on-Si lasers by Liu, Jifeng, Sun, Xiaochen, Michel, Jurgen, Kimerling, Lionel C., Camacho-Aguilera, Rodolfo Ernesto, Cai, Yan

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InGaAs/InAs heterojunction vertical nanowire tunnel FETs fabricated by a top-down approach by Zhao, Xin, Vardi, Alon, del Alamo, Jesus A.

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Design space and origin of off-state leakage in GaN vertical power diodes by Wong, H.-Y., Braga, N. A., Mickevicius, R. V., Jayanta Joglekar, Sameer, Palacios, Tomas, Sun, Min, Zhang, Yuhao, Yu, Lili

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10-nm Fin-width InGaSb p-channel self-aligned FinFETs using antimonide-compatible digital etch by Lu, Wenjie, Roh, I. P., Geum, D.-M., Kim, S.-H., Song, J. D., Kong, L., del Alamo, Jesus A

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First Demonstration of a Self-Aligned GaN p-FET by Chowdhury, Nadim, Xie, Qingyun, Yuan, Mengyang, Rajput, Nitul S., Xiang, Peng, Cheng, Kai, Then, Han Wui, Palacios, Tomas

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Advanced Gate Technologies for State-of-the-art f[subscript T] in AlGaN/GaN HEMTs by Chung, Jinwook, Kim, Tae-Woo, Palacios, Tomas

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60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics by Kim, Tae-Woo, Kim, Dae-Hyun, del Alamo, Jesus A.

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Large-scale 2D electronics based on single-layer MoS[subscript 2] grown by chemical vapor deposition by Wang, H., Yu, L., Lee, Y.-H., Fang, W., Hsu, Allen Long, Chin, M., Dubey, Madan, Li, L.-J., Kong, Jing, Herring, Patrick Kenichi, Palacios, Tomas

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