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    Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness by Dai C, Huo C, Qi S, Dai M, Webster T, Xiao H

    Published 2020-10-01
    “…Chaoqi Dai,1,2,* Changhe Huo,2,* Shaocheng Qi,2,* Mingzhi Dai,2,3 Thomas Webster,4 Han Xiao1 1College of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, People’s Republic of China; 2Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China; 3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China; 4Department of Chemical Engineering, Northeastern University, MA, Boston 02115, USA*These authors contributed equally to this workCorrespondence: Mingzhi DaiNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of ChinaTel +86 151 5831 3993Email daimz@nimte.ac.cnThomas WebsterDepartment of Chemical Engineering, Northeastern University, Boston, MA 02115, USATel +1-617-373-6585Email th.webster@neu.eduBackground: Artificial synaptic behaviors are necessary to investigate and implement since they are considered to be a new computing mechanism for the analysis of complex brain information. …”
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