High Threshold Voltage Normally off Ultra-Thin-Barrier GaN MISHEMT with MOCVD-Regrown Ohmics and Si-Rich LPCVD-SiNx Gate Insulator by Hsiang-Chun Wang, Hsien-Chin Chiu, Chong-Rong Huang, Hsuan-Ling Kao, Feng-Tso Chien

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Study of Phase Transition in MOCVD Grown Ga₂O₃ from κ to β Phase by Ex Situ and In Situ Annealing by Junhee Lee, Honghyuk Kim, Lakshay Gautam, Kun He, Xiaobing Hu, Vinayak P. Dravid, Manijeh Razeghi

Subjects: “…MOCVD…”
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Large-Scale MOCVD Deposition of Nanostructured TiO₂ on Stainless Steel Woven: A Systematic Investigation of Photoactivity as a Function of Film Thickness by Alessandro Galenda, Marta Maria Natile, Naida El Habra

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The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate by Kohen, David, Bao, Shuyu, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Tan, Chuan Seng, Yoon, Soon Fatt, Fitzgerald, Eugene A

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The Role of Carbon in Metal–Organic Chemical Vapor Deposition-Grown MoS₂ Films by Tianyu Hou, Di Li, Yan Qu, Yufeng Hao, Yun Lai

Subjects: “…MOCVD…”
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High-Power Mid-Infrared Quantum Cascade Laser with Large Emitter Width by Yupei Wang, Yuhang Zhang, Jun Wang, Yang Cheng, Wu Zhao, Zhixiang Wei, Dayong Zhou

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Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors by Yujie Huang, Jing Yang, Degang Zhao, Yuheng Zhang, Zongshun Liu, Feng Liang, Ping Chen

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Experimental and Modeling Study on the High-Performance p⁺⁺-GaAs/n⁺⁺-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted by Yudan Gou, Jun Wang, Yang Cheng, Yintao Guo, Xiao Xiao, Heng Liu, Shaoyang Tan, Li Zhou, Huomu Yang, Guoliang Deng, Shouhuan Zhou

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The Effect of a Nucleation Layer on Morphology and Grain Size in MOCVD-Grown β-Ga₂O₃ Thin Films on C-Plane Sapphire by Lauris Dimitrocenko, Gundars Strikis, Boris Polyakov, Liga Bikse, Sven Oras, Edgars Butanovs

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Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm by Małgorzata Kopytko, Jan Sobieski, Waldemar Gawron, Piotr Martyniuk

“…The paper presents research on the potential application of the HgCdTe (100) oriented and HgCdTe (111)B heterostructures grown by metal-organic chemical vapor deposition (MOCVD) on GaAs substrates for the design of avalanche photodiodes (APDs) operating in the IR range up to 8 µm and under 2-stage TE cooling (<i>T</i> = 230 K). …”
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Atomic-column resolution quantitative composition analysis of AlN interlayer in MOCVD-grown AlGaN/AlN/GaN heterostructure using HAADF-STEM by Q. Li, Y. Zhang

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Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED by Mahat, Mohamad Raqif, Talik, Noor Azrina, Abd Rahman, Mohd Nazri, Anuar, Mohd Afiq, Allif, Kamarul, Azman, Adreen, Nakajima, Hideki, Shuhaimi, Ahmad, Abd Majid, Wan Haliza

“…In-situ annealing process took place in Metal Oxide Chemical Vapor Deposition (MOCVD) chamber while ex-situ annealing process was carried out in the conventional oven. …”

Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD by Sivanathan, P.C., Shuhaimi, Ahmad, Hamza, Hebal, Kowsz, Stacy J., Abdul Khudus, Muhammad Imran Mustafa, Li, Hong Jian, Allif, Kamarul

Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD by Abd Rahman, Mohd Nazri, Talik, Noor Azrina, Abdul Khudus, Muhammad Imran Mustafa, Sulaiman, Abdullah Fadil, Allif, Kamarul, Zahir, Norhilmi Mohd, Shuhaimi, Ahmad

Photocatalytic Degradation of Methyl Orange and Methylene Blue Dyes by Engineering the Surface Nano-Textures of TiO₂ Thin Films Deposited at Different Temperatures via MOCVD by Zaki S. Khalifa, Mohamed Shaban, Inas A. Ahmed

“…TiO₂ thin films were deposited on quartz substrates by metal–organic chemical vapor deposition (MOCVD) at temperatures of 250, 350, and 450 °C. X-ray diffraction (XRD) data revealed the production of a pure anatase phase, a decrease in crystallite size, and a textural change as deposition temperature increased. …”
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InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates by Ryan C. White, Hongjian Li, Michel Khoury, Cheyenne Lynsky, Michael Iza, Stacia Keller, David Sotta, Shuji Nakamura, Steven P. DenBaars

Subjects: “…MOCVD…”
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Mechanism of defects and electrode structure on the performance of AlN-based metal semiconductor metal detectors by Guanghui Li, Pengbo Wang, Xinran He, Yulong Meng, Feng Liang, Mei Zhou, Degang Zhao

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Heteroepitaxy Growth and Characterization of High-Quality AlN Films for Far-Ultraviolet Photodetection by Titao Li, Yaoping Lu, Zuxin Chen

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Growth of p-type GaN – The role of oxygen in activation of Mg-doping by Ashutosh Kumar, Martin Berg, Qin Wang, Michael Salter, Peter Ramvall

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Deposition of Gadolinia-Doped Zirconia Layers Using Metalorganic Compounds at Low Temperatures by Agata Sawka

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