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Study on Motion and Deposition of Nanoparticles in Rotary MOCVD Reactors of Gallium Nitride
Published 2023-08-01“…Nanoparticles have a negative effect on the preparation of Gallium Nitride (GaN) by Metal-Organic Chemical Vapor Deposition (MOCVD). We developed a particle tracking and particle-wall collision model coupled with the bulk gas flow solver to investigate the motion and deposition of nanoparticles in single-wafer and multi-wafer reactors. …”
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Model Research On Deposition Of Pure Aluminium Oxide Layers By MOCVD Method
Published 2015-06-01Subjects: “…MOCVD method…”
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23
Demonstration of MOCVD-grown BGaN with over 10% boron composition
Published 2022-08-01Get full text
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Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces
Published 2023-04-01“…Surface etching has appeared to be an efficient means to increase the photoluminescence yield from MOCVD GaN materials. This work aimed to improve the scintillation characteristics of MOCVD GaN by a wet etching method. …”
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The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD
Published 2018-05-01Get full text
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MOCVD growth of In GaP-based heterostructures for light emitting devices
Published 2006Get full text
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27
GaN Based Nanomaterials Fabrication with Anodic Aluminium Oxide by MOCVD
Published 2003Get full text
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MOCVD growth of III-V compounds for long wavelength optoelectronic devices
Published 2008“…Metal-Organic Chemical Vapour Deposition (MOCVD) growth of InP based III-V semiconductor materials for long-wavelength semiconductor lasers have been studied in detail. …”
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LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
Published 1989Conference item -
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LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
Published 1989Journal article -
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Growth of binary, ternary and quatenary III-V compounds nanowores by MOCVD
Published 2011“…Various III-V compounds semiconductor Nanowires (NWs) have been grown by using vertical camber MOCVD. The morphology of the NWs has been characterized using FESEM and SEM. …”
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Model Research On Synthesis Of Al2O3-C Layers By MOCVD
Published 2015-06-01Subjects: “…MOCVD method…”
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ETCHING MECHANISM OF CCl<sub>4</sub>-DOPED GaAs GROWN BY MOCVD
Published 2013-08-01Subjects: “…gaas, ccl<sub>4</sub> doping, etching mechanism, mocvd.…”
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XPS investigations of MOCVD tin oxide thin layers on Si nanowires array
Published 2018-12-01Get full text
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36
Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD
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Triggering Thermal Healing of Large Area MOCVD Grown TMDs at the Trion Dissociation
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38
MOCVD生长AlGaInAs/InP多量子阱激光器
Published 2018-01-01“…为研制符合高线性大功率的应变多量子阱激光器,文章在理论上计算了应变补偿,实验选用了金属有机物化学气相沉淀（MOCVD）工艺来研制生长AlGaInAs应变补偿多量子阱结构,最终有源区采用了7组张压应变交替的势垒和势阱层。…”
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The estimation of possibility of the using gas mixer for obtaining sharper MOCVD grown heterojunctions
Published 2014-08-01Subjects: “…3d model, mocvd, movpe, horizontal rector, gas mixer, inxga1-xas, numerical studying, heterojunctions…”
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Epitaxial growth of β-Ga2O3 by hot-wall MOCVD
Published 2022-05-01“…Hence, hot-wall MOCVD is proposed as a prospective growth method to be further explored for the fabrication of β-Ga2O3.…”
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