In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system by Cheng, Cheng-Wei, Ph.D. Massachusetts Institute of Technology

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Effect of Fe doping on phase transition of TiO2 nanoparticles synthesized by MOCVD by Othman, Siti Hajar, Abdul Rashid, Suraya, Mohd Ghazi, Tinia Idaty, Abdullah, Norhafizah

“…Titanium dioxide (TiO2) nanoparticles were prepared via Metal Organic Chemical Vapour Deposition (MOCVD) technique at 400 and 700°C. Different amount of iron (Fe) dopant was introduced inside the MOCVD reactor along with the precursor to produce different Fe dopant concentrations of TiO2 nanoparticles. …”
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The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD. by A. A. Marmalyuk, D. E. Arbenin, E. V. Burlyaeva

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MOCVD-grown Ga2O3 thin films for polarization-sensitive infrared photonics by Sina Abedini Dereshgi, Junhee Lee, Daniele Ceneda, Maria Cristina Larciprete, Marco Centini, Manijeh Razeghi, Koray Aydin

“…Here, we investigate the far-field characteristics of MOCVD-grown Ga2O3 thin films. With a combination of cross-polarization FTIR and AFM characterization techniques, we propose an easy and non-invasive route to distinguish κ and β phases of Ga2O3 and study the quality of these crystals. …”
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H2O vapor assisted growth of β-Ga2O3 by MOCVD by Fikadu Alema, Yuewei Zhang, Akhil Mauze, Takeki Itoh, James S. Speck, Brian Hertog, Andrei Osinsky

“…The role of water (H2O) vapor in reducing background impurity concentration in epitaxial Ga2O3 thin films grown by metalorganic chemical vapor deposition (MOCVD) was studied. Adding H2O vapor to oxygen was found to increase the surface roughness and decrease the carrier concentration but have no effect on the structural quality and RT electron mobility of both the UID and doped films. …”
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Noble Metals for Modern Implant Materials: MOCVD of Film Structures and Cytotoxical, Antibacterial, and Histological Studies by Svetlana I. Dorovskikh, Evgeniia S. Vikulova, Elena V. Chepeleva, Maria B. Vasilieva, Dmitriy A. Nasimov, Eugene A. Maksimovskii, Alphiya R. Tsygankova, Tamara V. Basova, David S. Sergeevichev, Natalya B. Morozova

“…AuNPs (11–14 nm) were deposited by a pulsed MOCVD method, while Ag films (35–40 nm in thickness) were obtained by physical vapor deposition (PVD). …”
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Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS₂ by Amir Ghiami, Annika Grundmann, Songyao Tang, Hleb Fiadziushkin, Zhaodong Wang, Stephan Aussen, Susanne Hoffmann-Eifert, Michael Heuken, Holger Kalisch, Andrei Vescan

“…Metal–organic chemical vapor deposition (MOCVD) is a key method for scalable synthesis of two-dimensional transition metal dichalcogenide (2D-TMDC) layers. …”
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Characterization of the Micro-Structural Properties of InAlN/GaN Epilayer Grown by MOCVD by Youhua Zhu, Tao Hu, Meiyu Wang, Yi Li, Mei Ge, Xinglong Guo, Honghai Deng, Zhitao Chen

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THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD by Т. А. Bagaev, М. А. Ladugin, А. А. Padalitsa, А. А. Marmalyuk

Subjects: “…quantum well, ingaas, compensation layer gaasp, misfit dislocation, elastic stresses, mocvd.…”
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INVESTIGATION OF ZnO NANO STRUCTURES FABRICATED ON AL2O3 SUBSTRACTES BY MOCVD by Nguyen Thanh Binh, Vu Thi Bich, Y. Segawa

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Influence of Lateral Growth on the Surface Pit Formation of GaN Heteroepitaxial Film Grown by MOCVD by Zhiyuan GAO, Xiaowei XUE, Huimin LI, Jiangjiang LI, Li MA, Wenrong WU, Deshu ZOU

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β-Ga2O3 Deposited via MOCVD for Mid-Infrared Polarization Control by Ceneda Daniele, Centini Marco, Dereshgi Sina Abedini, Aydin Koray, Larciprete Maria Cristina

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Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD by R. E. Beisenov, R. Ebrahim, Z. A. Mansurov, S. Th. Tokmoldin, B. Z. Mansurov, A. Ignatiev

“…Thick silicon carbide films were grown on sapphire (0001) and silicon (111) substrates using metal organic chemical vapor deposition (MOCVD). Diethylmethylsilane (DEMS) has been used as a single precursor, which contain Si and C atoms in the same molecule, without any carrier or bubbler gas. …”
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Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD by Houqiang Fu, Xuanqi Huang, Hong Chen, Zhijian Lu, Yuji Zhao

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Novel process and apparatus design for metalorganic chemical vapor deposition (MOCVD) of superconducting thin films by Hubert, Brian Norio

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High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD by Hartono, Haryono, Chua, Soo-Jin, Fitzgerald, Eugene A., Song, T.L., Chen, Peng

“…The growth was done on c-plane sapphire by MOCVD. Results showed that green emission was obtained which indicates a relatively high In incorporation.…”
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Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD by Zhou, Guangnan, Covian, Alejandra V. Cuervo, Lee, Kwang Hong, Han, Han, Tan, Chuan Seng, Liu, Jifeng, Xia, Maggie Guangrui

“…These results indicate that MOCVD n+ Ge is very promising to reduce the threshold of Ge gain media on Si notably.…”
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Hetero-epitaxial growth and mechanism of one-dimensional InSb nanostructures on GaAs substrate by MOCVD by Jin, Y. J., Zheng, X. E., Gong, S. J., Ke, Chang, Xiao, M. Q., Ling, B., Yu, S. Y., Zhang, Dao Hua

“…In this work, (111)-orientated vertical InSb NWs are achieved on GaAs substrate through a hetero-epitaxy process by metal-organic chemical vapor deposition (MOCVD). The effects of growth parameters such as temperature, rV/III ratio on the InSb NWs have been studied systematically. …”
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Characteristic Enrichment of the Blue LED by MOCVD on Patterned Sapphire (0 0 0 1) Substrate by Kamarulzaman, Kamarul Alif, Ameera, Anuar, Shuhaimi, Ahmad, Hongjian, Li, Alias, Ezzah Azimah, Samsudin, Muhammad Esmed Alii, Zainal, Norzaini

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The effect of growth temperature on indium gallium arsenide (InGaAs) quantum dots grown using mocvd / by Hamizah Nadia Alias @ Yusof, 1988-, Zulkafli Othman,lcsupervisor, Fakulti Sains