Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of Al_zGa_1−zAs (0 ≤ <i>z</i> ≤ 0.3) Layers in Arrays of Ultrawide Windows by Viktor Shamakhov, Sergey Slipchenko, Dmitriy Nikolaev, Ilya Soshnikov, Alexander Smirnov, Ilya Eliseyev, Artyom Grishin, Matvei Kondratov, Artem Rizaev, Nikita Pikhtin, Peter Kop’ev

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Structural characterization of PbTi03, Sm0.6Nd0.4NiO3 and NdMnO3 multifunctional Perovskite thin films by Rapenne L., Girardot C., Ihzaz N., Pignard S., Boudard M., Roussel H., Bartasyte A.

Subjects: “…MOCVD…”
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Stability Analysis of Multi Process Parameters for Metal-Organic Chemical Vapor Deposition Reaction Cavity by Jian Li, Ziling Wu, Yifeng Xu, Yanli Pei, Gang Wang

Subjects: “…MOCVD…”
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Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate by Yuanyang Xia, Youhua Zhu, Chunhua Liu, Hongyuan Wei, Tingting Zhang, Yeeheng Lee, Tinggang Zhu, Meiyu wang, Li Yi, Mei Ge

Subjects: “…MOCVD…”
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High Brightness GaN-on-Si Based Blue LEDs Grown on 150 mm Si Substrates Using Thin Buffer Layer Technology by Liyang Zhang, Wei-Sin Tan, Simon Westwater, Antoine Pujol, Andrea Pinos, Samir Mezouari, Kevin Stribley, John Whiteman, John Shannon, Keith Strickland

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Temperature-Dependent Structural and Electrical Properties of Metal-Organic CVD MoS₂ Films by Roman I. Romanov, Ivan V. Zabrosaev, Anastasia A. Chouprik, Dmitry I. Yakubovsky, Mikhail K. Tatmyshevskiy, Valentyn S. Volkov, Andrey M. Markeev

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N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation by Zhaole Su, Yangfeng Li, Xiaotao Hu, Yimeng Song, Rui Kong, Zhen Deng, Ziguang Ma, Chunhua Du, Wenxin Wang, Haiqiang Jia, Hong Chen, Yang Jiang

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Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer by Jiahui Hu, Jun Zhang, Yi Zhang, Huixue Zhang, Hanling Long, Qian Chen, Maocheng Shan, Shida Du, Jiangnan Dai, Changqing Chen

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MOCVD of InGaN on ScAlMgO₄ on Al₂O₃ Substrates with Improved Surface Morphology and Crystallinity by Guangying Wang, Yuting Li, Jeremy Kirch, Yizhou Han, Jiahao Chen, Samuel Marks, Swarnav Mukhopadhyay, Rui Liu, Cheng Liu, Paul G. Evans, Shubhra S. Pasayat

Subjects: “…MOCVD…”
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Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature... by Jie Song, Jung Han

Subjects: “…MOCVD…”
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Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers by Ryan C. White, Michel Khoury, Matthew S. Wong, Hongjian Li, Cheyenne Lynsky, Michael Iza, Stacia Keller, David Sotta, Shuji Nakamura, Steven P. DenBaars

Subjects: “…MOCVD…”
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Epitaxial Lateral Overgrowth of GaN on a Laser-Patterned Graphene Mask by Arūnas Kadys, Jūras Mickevičius, Kazimieras Badokas, Simonas Strumskis, Egidijus Vanagas, Žydrūnas Podlipskas, Ilja Ignatjev, Tadas Malinauskas

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A Review of Homoepitaxy of III-Nitride Semiconductors by Metal Organic Chemical Vapor Deposition and the Effects on Vertical Devices by Jennifer K. Hite

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High-Quality AlN Grown on Si(111) Substrate by Epitaxial Lateral Overgrowth by Yingnan Huang, Jianxun Liu, Xiujian Sun, Xiaoning Zhan, Qian Sun, Hongwei Gao, Meixin Feng, Yu Zhou, Hui Yang

Subjects: “…MOCVD…”
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Morphology and optical properties of CuAlS2 crystals prepared using the solid-phase Al and S precursors by J. Damisa, B. Olofinjana, O. Ebomwonyi, M.A. Eleruja, S.O. Azi

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Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition by Jin, Yun Jiang, Tang, Xiao Hong, Ke, Chang, Yu, S. Y., Zhang, Dianwen Hua

Subjects: “…MOCVD…”
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Crecimiento de películas delgadas de membranas de conducción iónica mediante la técnica PIMOCVD by García, G., Caro, J., Santiso, J., Pardo, J. A., Figueras, A., Abrutis, A.

Subjects: “…MOCVD…”
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Anomalous diffusion of Ga and As from semi-insulating GaAs substrate into MOCVD grown ZnO films as a function of annealing temperature and its effect on charge compensation by Pranab Biswas, Nripendra N. Halder, Souvik Kundu, P. Banerji, T. Shripathi, M. Gupta

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Highly Conductive n-Al_0.65Ga_0.35N Grown by MOCVD Using Low V/III Ratio by Christian J. Zollner, Yifan Yao, Michael Wang, Feng Wu, Michael Iza, James S. Speck, Steven P. DenBaars, Shuji Nakamura

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Comprehensive Comparison of MOCVD- and LPCVD-SiN_x Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications by Longge Deng, Likun Zhou, Hao Lu, Ling Yang, Qian Yu, Meng Zhang, Mei Wu, Bin Hou, Xiaohua Ma, Yue Hao

“…In this paper, we systematically investigated the differences between the SiN_x/GaN interface of two high-temperature passivation schemes, MOCVD-SiN_x and LPCVD-SiN_x, and investigated their effects on the ohmic contact mechanism. …”
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