Positive-bias temperature instability (PBTI) of GaN MOSFETs by Guo, Alex, del Alamo, Jesus A.

“…We have investigated the stability of the gate stack of GaN n-MOSFETs under positive gate stress. Devices with a gate dielectric that consists of pure SiO[subscript 2] or a composite SiO[subscript 2]/Al[subscript 2]O[subscript 3] bilayer were studied. …”
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Extraction of MOSFET doping profiles from device electrical measurements by Rahman, Nadir E. (Nadir Ehsanur), 1971-

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Measurement and modeling of transient effects in partially-depleted SOI MOSFETs by Wei, Andy, 1972-

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Optimal design of channel doping for fully depleted SOI MOSFETs by Ouma, Dennis Okumu

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An Analysis of Posynomial MOSFET Models Using Genetic Algorithms and Visualization by Salameh, Lynne Rafik

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Silicon-Germanium interdiffusion and its impacts on enhanced mobility MOSFETs by Xia, Guangrui, 1976-

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Laterally non-uniform doping profiles on MOSFETs : modeling and analysis by Jackson, Keith M. (Keith Matthew)

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An analysis of posynomial MOSFET models using genetic algorithms and visualization by Salameh, Lynne Rafik

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Effect of MOSFET threshold voltage variation on high-performance circuits by Narendra, Siva G. (Siva Gurusami), 1971-

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A ballistic transport model for HEMTs and III-V MOSFETs by Warnock, Shireen M

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Design of precision-aware subthreshold-based MOSFET voltage reference by Mu, Shuzheng, Chan, Pak Kwong

“…A new precision-aware subthreshold-based MOSFET voltage reference is presented in this paper. …”
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Software/hardware interactive learning for understanding operating region for MOSFETs by Chong, Justin Zhi Yu

“…Overall, this project provides a comprehensive approach to learning about MOSFETs and their operating region. By combining interactive learning software and hardware, videos, DIY circuits, and quizzes, students can gain a deeper understanding of MOSFETs and their application in power electronics. …”
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Characterization and modeling of negative bias temperature instability in P-MOSFETs by Yang, Jianbo

“…This thesis is concerned with the study of negative bias temperature instability (NBTI) in p-MOSFETs. A simple characterization method based on the single-point measurement of the saturated drain current is first proposed to minimize the unwanted recovery effect during the NBTI measurement. …”
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Characterization and modeling of deep-submicron MOSFET's including frequency effects by Wong, Jen Shuang.

“…This thesis presents the approaches to characterize the deep submicron-meter MOSFETs operating both in DC and in high frequency region. …”
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Characterization of deep submicron MOSFET with ultra thin gate oxide by Sun, Quan.

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Compact modeling of gate-all-around silicon nanowire MOSFETs by Lin Shihuan

“…This thesis documents the compact model development for the silicon nanowire MOSFET. A surface-potential based scalable model is developed for silicon nanowire MOSFET. …”
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Simulation and characterization of the process and circuit of the MOSFET device with ISRC structure by Lee, Yong Kuen.

“…The main objectives of this project are examining and elucidating unique features of Ultra thin film MOSFET by TCAD tools and providing useful understanding and data that could be used in MOS device and circuit design and optimization for high performance, low voltage/power ICes.…”
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Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs by Ajaykumar, Arjun, Zhou, Xing, Chiah, Siau Beh, Syamal, Binit

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FOSS as an efficient tool for extraction of MOSFET compact model parameters by Tomaszewski, Daniel, Gluszko, Grzegorz, Brinson, Mike, Kuznetsov, Vadim, Grabinski, Wladek

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A model for temperature insensitive trimmable MOSFET current sources by Shah, S, Collins, S

“…A model of this potentially useful behavior is presented which suggests that it arises from a combination of the temperature dependence of a MOSFET and the modulation of its source voltage caused by a second MOSFET acting as a voltage controlled resistor. © 2007 IEEE.…”