Multi-dimensional models of sic power mosfet for accurately predicting the characteristics by Shen Diao, Hong Chen, Yanhu Chen, Yun Bai, Chengyue Yang, Xinyu Liu, Chengzhan Li, Zhengdong Zhou

Subjects: Get full text

Investigation of the Degradation Mechanism of SiC MOSFET Subjected to Multiple Stresses by Huifen Dong, Yunxia Wu, Chan Li, Hai Xu

Subjects: Get full text

A Novel ON-State Resistance Modeling Technique for MOSFET Power Switches by Ionuț-Constantin Guran, Adriana Florescu, Lucian Andrei Perișoară

“…An essential parameter of MOSFET power switches is the ON-state resistance (RDS_ON), because it determines the power losses during the ON state. …”
Get full text

Electro-Thermal simulation study of MOSFET modeling in Silicon and Silicon carbide by B Mourched, N Abboud, M Abdallah, M Moustafa

“…In this paper, a 2D electro-thermal coupling model of a MOSFET power device is presented using COMSOL Multiphysics software. …”
Get full text

Influence of Hole Current Crowding on Snapback Breakdown in Multi-Finger MOSFETs by Siyoun Lee, Seong-Yeon Kim, Haesoon Oh, Jaesung Sim, Woo Young Choi

Subjects: Get full text

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET by Fan Zhang, Yibo Wang, Yi Liu, Minghu Wu, Zilong Zhou

Get full text

First designing of a silicene-based optical MOSFET with outstanding performance by Hamed Emami-Nejad, Ali mir, Zeinab Lorestaniweiss, Ali Farmani, Reza Talebzadeh

“…Here, a silicene-based optical MOSFET with excellent performance is designed to achieve integrated circuit optical technology. …”
Get full text

Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor by Papanasam Esakki, Prashanth Kumar, Manikandan Esakki, Adithya Venkatesh

Subjects: Get full text

Gate Ringing in Superjunction MOSFETs with a Parasitic Capacitance in the Load Inductor by Hyemin Kang, Florin Udrea

Subjects: “…Power mosfets…”
Get full text

Process integration of erbium-doped silicon light-emitting diodes and MOSFETs by Zheng, Bo

Get full text

The effects of strain on carrier transport in thin and ultra-thin SOI MOSFETs by Lauer, Isaac, 1976-

Get full text

Substrate and channel engineering for improving performance of strained-SiGe MOSFETs by Gupta, Saurabh, Ph. D. Massachusetts Institute of Technology

Get full text

Device design and process technology for sub-100 nm SOI MOSFET's by Wei, Andy, 1972-

Get full text

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs by Piner, Edwin L., Jae-kyu, Lee, Chung, Jinwook, Palacios, Tomas

Subjects: “…metal–oxide–semiconductor field-effect transistor (MOSFET)…”
Get full text
Get full text

Design & optimization of automotive power electronics utilizing FITMOS MOSFET technology by Li, Wei, Ph. D. Massachusetts Institute of Technology. Department. of Electrical Engineering and Computer Science.

Get full text

Seamless On-wafer integration of GaN HEMTs and Si(100) MOSFETs by Palacios, Tomas, Piner, E. L., Lee, J., Chung, J. W.

“…In this paper, we demonstrate the first on-wafer integration of AlGaN/GaN high electron mobility transistors (HEMTs) with Si(100) MOSFETs.…”
Get full text
Get full text

Interactive e-learning environment for learning MOSFET via simple project by Syamil Bin Sabirin

“…This report focuses on the development of an Interactive E-learning Environment for users to have a better understanding on Metal Oxide Semiconductor Field Effect Transistor (MOSFET). MOSFETs are the most common type of transistor today and are pivotal in modern electronic devices, offering efficient switching capabilities and high power-handling capabilities. …”
Get full text

Nanoscale strained-Si/SiGe and double-gate MOSFET modeling by Karthik Chandrasekaran

Get full text

Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs by Lim, Wai Tat.

“…The purpose of this project is to study the dopant redistribution and its associated effect on the diode I-V characteristics of the source and drain during gate oxide breakdown in narrow metal-oxide-semiconductor field-effect transistor (MOSFET). During the evolution of gate dielectric progressive breakdown, the substantially high localized temperatures in the vicinity of the breakdown spot which can exceed silicon melting point will cause impurity dopants in the silicon to be redistributed.…”
Get full text

Power MOSFET yield improvement through the improvement and refinement of epitaxy process by Ng, Kin Meng.

“…The work involved in this project is yield improvement of Power MOSFET (PMOS) wafers manufactured in STMicroelectronics. …”
Get full text