Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs by Yupeng Jia, Zhengxuan Zhang, Dawei Bi, Zhiyuan Hu, Shichang Zou

“…In this work, the effects of total dose irradiation on the parasitic bipolar junction transistor (BTJ) in 130 nm PDSOI MOSFETs were investigated. The experimental results demonstrate that irradiation-induced oxide-trap charges can modify the E-B junction barrier, and thereby make the common-emitter gain <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>β</mi><mn>0</mn></msub></semantics></math></inline-formula> of the parasitic BJT in NMOS device increase, while decreasing it in a PMOS device. …”
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H-Terminated Diamond MOSFETs on High-Quality Diamond Film Grown by MPCVD by Wenxiao Hu, Xinxin Yu, Tao Tao, Kai Chen, Yucong Ye, Jianjun Zhou, Zili Xie, Yu Yan, Bin Liu, Rong Zhang

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Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate by Genqiang Chen, Wei Wang, Fang Lin, Minghui Zhang, Qiang Wei, Cui Yu, Hongxing Wang

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Modeling and Simulation-Based Layout Optimization for Tolerance to TID Effect on n-MOSFET by Minwoong Lee, Namho Lee, Jongyeol Kim, Younggwan Hwang, Seongik Cho

“…In the present study, the layout structure of an n-MOSFET, which is vulnerable to radiation, was designed in a different way to enhance its tolerance to radiation. …”
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Multi-Pulse Si-MOSFET Gate Driving Utilizing Gate Loop Inductance by Jan Hammer, Ignacio Galiano Zurbriggen, Martin Ordonez

Subjects: “…<sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet</sc>…”
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Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor by Xiaofeng Zhao, Dianzhong Wen, Gang Li

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Analysis of Kink Effect in Short-Channel Floating Body PD-SOI MOSFETs by Kyeongjun Kim, Seonghearn Lee

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Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions by Ruizhu Wu, Simon Mendy, Nereus Agbo, Jose Ortiz Gonzalez, Saeed Jahdi, Olayiwola Alatise

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Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions by Yuan Zou, Jue Wang, Hongyi Xu, Hengyu Wang

Subjects: “…SiC trench MOSFET…”
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Analysis of the Multi-Steps Package (MSP) for Series-Connected SiC-MOSFETs by Luciano F. S. Alves, Pierre Lefranc, Pierre-Olivier Jeannin, Benoit Sarrazin, Jean-Christophe Crebier

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An experimental study on switching waveform design with gate charge control for power MOSFETs by Hirotaka Oomori, Ichiro Omura

“…In this paper, a verification system including a simple gate current pulse generator consisting of operational amplifiers and transistors was built together with a conventional voltage source gate driver, and validation of the proposed method was experimentally performed using the drain-source voltage waveform of a Si MOSFET during the turn-off phase. Applying the obtained drain-source voltage responses to the proposed method, the gate current pulse to be added to realize a given target waveform was calculated and superimposed on the output of the gate driver. …”
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A fast forecasting model of electrothermal distribution for parallelled SiC MOSFETs by Haihong Qin, Haoxiang Hu, Ziyue Zhu, Qiang Xiu, Libiao Xie, Liming Hu

Subjects: “…SiC MOSFET…”
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Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off by Hui Li, Xinglin Liao, Yaogang Hu, Zhangjian Huang, Kun Wang

“…An analysis of variation in voltage (dVDS/dt) for SiC MOSFET during turn-on and turn-off has been performed theoretically and experimentally in this paper. …”
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Influence Analysis of SiC MOSFET’s Parasitic Capacitance on DAB Converter Output by Cheol-Woong Choi, Jae-Hyeon So, Jae-Sub Ko, Dae-Kyong Kim

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A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs by He Cheng, Zhijia Yang, Chao Zhang, Chuang Xie, Tiefeng Liu, Jian Wang, Zhipeng Zhang

Subjects: “…sub-7 nm nanowire GAA MOSFET…”
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Electron irradiation effects and room-temperature annealing mechanisms for SiC MOSFETs by Mu He, Peng Dong, Yao Ma, Qingkui Yu, Shuang Cao, Wende Huang, Qian Xu, Sijie Zhang, Mingmin Huang, Yun Li, Zhimei Yang, Min Gong

Subjects: “…SiC MOSFET…”
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Latent Gate Oxide Damage in SiC MOSFET Induced by Heavy Ions by YU Qingkui1,2;CAO Shuang1,2;ZHANG Chenrui1;SUN Yi1,2;MEI Bo1,2;WANG Qianyuan1,2;WANG He1,2;WEI Zhichao1,2;ZHANG Hongwei1,2;ZHANG Teng3;BAI Song3

Subjects: “…sic mosfet…”

Series Capacitance Gate Driver to Suppress Voltage Oscillation of SiC MOSFET by Sheng Dou, Liansheng Huang, Peng Fu, Xiaojiao Chen, Xiuqing Zhang, Shiying He, Zejing Wang, Jian Yang

“…The severe voltage oscillation of SiC MOSFET in switching transient affects the safety of devices and EMI. …”
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Nature of the Metal Insulator Transition in High-Mobility 2D_Si-MOSFETs by F. Elmourabit, S. Dlimi, A. El Moutaouakil, F. Id Ouissaaden, A. Khoukh, L. Limouny, H. Elkhatat, A. El Kaaouachi

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Theory of slow traps and random telegraph signals in ultra-small planar MOSFETs by B. I. Fuks

“…It is shown that ultra-small MOSFETs with heavily doped substrates contain a significant concentration of slow traps in their space-charge regions. …”
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