Off-state leakage current variations in MOSFET mismatch modeling for circuit simulations by Ismail, Muhamad Amri, Md. Nasir, Iskhandar, Ismail, Razali

“…MOSFET is a type of field-effect transistor (FET). …”

Analytical threshold voltage model of nanoscale biaxial ultrathin strained-Si MOSFETs by Heong, Yau Wei, Ahmadi, Mohammad Taghi, Ismail, Razali

“…In this paper, a new physically based analytical threshold-voltage model is presented for biaxial ultrathin strained Silicon (s-Si) MOSFETs for tbe first time, taking into account different doping layers in depletion layer. …”

Enhanced performance analysis of vertical strained-sige impact ionization MOSFET (VESIMOS) by Saad, Ismail, Pogaku, Divya, A. R., Abu Bakar, H., Mohd. Zuhir, Bolon, N., A. M., Khairul, Ghosh, Bablu, Ismai, Razali, Hashim, U.

“…The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET (VESIMOS) has been successfully developed and analyzed in this paper. …”

A Novel Dielectric Modulated Gate-Stack Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor-Based Sensor for Detecting Biomolecules by Dibyendu Chowdhury, Bishnu Prasad De, Bhargav Appasani, Navaneet Kumar Singh, Rajib Kar, Durbadal Mandal, Nicu Bizon, Phatiphat Thounthong

Subjects: Get full text

Numerical study of diffusion current characteristic for nondegenerate N-type strained silicon MOSFET / by 274745 Kang, Eng Siew, Razali Ismail, 1960-, author, Kang, Eng Siew, 1985-, author, Mohammad Taghi Ahmadi, author, Munawar A. Riyadi, author, International Conference of Workshops on Basic of Applied Scinces (2nd : 2009 : Johor)

Pencirian arus-voltan bagi transistor kesan medan logam-oksida silikon (mosfet) / by 401364 Rizuan Mohd Mahrol, Hazri Bakhtiar, Fakulti Sains

Mengkaji pencirian N-mosfet dengan perubahan konsentrasi pendopan substrat menggunakan pspice / by 344441 Nurul Humaimah Mansor, Hazri Bakhtiar, Fakulti Sains

Mengkaji ciri elektrik mosfet terhadap perubahan suhu operasi menggunakan simulasi pspice / by 386695 Rahmatia Badaini, Hazri Bakhtiar, Fakulti Sains

Mengkaji pengaruh tempoh operasi litar terhadap pencirian elektrik mosfet jenis N / by Mohd.`Azizir-Rahim Mukri, Hazri Bakhtiar, Fakulti Sains

Simulation of channel or gate dimensional effects on the electrical characteristics of p-mosfet using PSPICE / by 442496 Ng, Ming Wei, Hazri Bakhtiar supervisor

Computer-aided synthesis and design of monalithic microwave gallium-arsenide mosfet amplifiers / [mikrofilem] by 403654 Dijak, Jerome Thomas

Channel length effects on the characteristic of submicron nLDD-mosfet exposed to gamma radiation / by Siti Norsheila Zahari, 1989- , author, Hazri Bakhtiar, supervisor, Wan Muhamad Saridan Wan Hassan, supervisor, Fakulti Sains

Channel length effects on the characteristic of submicron nLDD-mosfet exposed to gamma radiation / by Siti Norsheila Zahari, 1989- , author, Fakulti Sains

DESIGN AND SIMULATION OF A MULTILAYER SOI-MOSFET STRUCTURE FOR IMPROVING SELF-HEATING EFFECTS by علی اصغر Orouji, سارا Heydari

“…The results show that the structure provides a new path to reduce the temperature of the channel of SOI Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) and decreases the temperature in the channel.…”
Get full text

MOSFET Physics-Based Compact Model Mass-Produced: An Artificial Neural Network Approach by Shijie Huang, Lingfei Wang

Subjects: Get full text

Modular Marx Generator Based on SiC-MOSFET Generating Adjustable Rectangular Pulses by Yahia Achour, Jacek Starzyński, Jacek Rąbkowski

Subjects: Get full text

Active Auto-Suppression Current Unbalance Technique for Parallel-Connected Silicon Carbide MOSFETs by Nektarios Giannopoulos, George Ioannidis, Constantinos Psomopoulos

Subjects: Get full text

Analysis and Comprehensive Analytical Modeling of Statistical Variations in Subthreshold MOSFET's High Frequency Characteristics by Rawid Banchuin

Subjects: Get full text

Long-Term Lifetime Prediction of Power MOSFET Devices Based on LSTM and GRU Algorithms by Mesfin Seid Ibrahim, Waseem Abbas, Muhammad Waseem, Chang Lu, Hiu Hung Lee, Jiajie Fan, Ka-Hong Loo

Subjects: Get full text

Radiation and Annealing Effects on GaN MOSFETs Irradiated by 1 MeV Electrons by Tongshan Lu, Chenghua Wang

Subjects: “…GaN MOSFET…”
Get full text