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401
The influence and application of SiC MOSFET driver modules in the contemporary power electronics industry
Published 2023-01-01“…Technological progress has driven the rapid development of power electronics and enhanced the scale of the industry. SiC MOSFET devices have obvious advantages in applications such as high temperature resistance, high voltage resistance, and low switching loss. …”
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402
Supply Voltage and Temperature Dependence of Single-Event Transient in 28-nm FDSOI MOSFETs
Published 2019-06-01“…Based on three-dimensional (3D) technology computer aided design (TCAD) simulations, the supply voltage and temperature dependence of single-event transient (SET) pulse width in 28-nm fully-depleted silicon-on-insulator (FDSOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is investigated. FDSOI MOSFETs are symmetry devices with a superior control of the short channel effects (SCEs) and single-event effects (SEEs). …”
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403
Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
Published 2021-01-01“…A 16-nm-L<sub>g</sub> p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. …”
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404
Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis
Published 2022-09-01Subjects: “…4H-SiC MOSFET…”
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405
Analysis of Ruggedness of 4H-SiC Power MOSFETs with Various Doping Parameters
Published 2022-12-01Subjects: “…power MOSFET…”
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406
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407
Physics-Informed Neural Network for High Frequency Noise Performance in Quasi-Ballistic MOSFETs
Published 2021-09-01Subjects: Get full text
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408
Design and experiments of isolated gate driver using discrete devices for silicon carbide MOSFET
Published 2023-01-01“…This technology provides a novel solution for SiC MOSFET gate driver in HT environment.…”
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409
An Improved Investigation into the Effects of the Temperature-Dependent Parasitic Elements on the Losses of SiC MOSFETs
Published 2020-10-01Subjects: Get full text
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410
Analysis of effects of MOSFET parasitic capacitance on non-synchronous buck converter electromagnetic emission
Published 2023-08-01Subjects: Get full text
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411
Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique
Published 2017-11-01Subjects: “…nanoscale DG MOSFET devices…”
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412
Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed
Published 2024-02-01Subjects: “…SiC MOSFET…”
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413
The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters
Published 2020-12-01“…Due to its high critical breakdown field and high thermal conductance, silicon carbide MOSFET devices are predestined for high-power applications. …”
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414
150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers
Published 2020-05-01Subjects: “…split-gate trench power MOSFET…”
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415
Threshold Voltage Degradation for n-Channel 4H-SiC Power MOSFETs
Published 2020-01-01Subjects: “…silicon carbide mosfet…”
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416
A Uni-gate vertical power MOSFET with improved figure of Merits: Design and analysis
Published 2023-03-01Subjects: “…Power MOSFET…”
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417
Experimental Study on Critical Parameters Degradation of Nano PDSOI MOSFET under TDDB Stress
Published 2023-07-01“…With the continuous integration of transistors, the characteristic size of MOSFETs is shrinking. Time-dependent dielectric electrical breakdown (TDDB) is still a key reliability problem of MOSFETs in recent years. …”
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418
Layout Strengthening the ESD Performance for High-Voltage N-Channel Lateral Diffused MOSFETs
Published 2020-04-01Subjects: “…n-channel lateral diffused MOSFET (nLDMOS)…”
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419
Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests
Published 2021-08-01“…High temperature reverse-bias (HTRB), High temperature gate-bias (HTGB) tests and electrical DC characterization were performed on planar-SiC power MOSFETs which survived to accelerated neutron irradiation tests carried out at ChipIr-ISIS (Didcot, UK) facility, with terrestrial neutrons. …”
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420
Parallel arrangement of MOSFETs, effective suppression of crosstalk: A new gate driver topology
Published 2023-09-01Get full text
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