The influence and application of SiC MOSFET driver modules in the contemporary power electronics industry by Chen Yulin, Wu Chengcheng, Zhao Siting

“…Technological progress has driven the rapid development of power electronics and enhanced the scale of the industry. SiC MOSFET devices have obvious advantages in applications such as high temperature resistance, high voltage resistance, and low switching loss. …”
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Supply Voltage and Temperature Dependence of Single-Event Transient in 28-nm FDSOI MOSFETs by Jingyan Xu, Yang Guo, Ruiqiang Song, Bin Liang, Yaqing Chi

“…Based on three-dimensional (3D) technology computer aided design (TCAD) simulations, the supply voltage and temperature dependence of single-event transient (SET) pulse width in 28-nm fully-depleted silicon-on-insulator (FDSOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is investigated. FDSOI MOSFETs are symmetry devices with a superior control of the short channel effects (SCEs) and single-event effects (SEEs). …”
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Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs by Jie Gu, Qingzhu Zhang, Zhenhua Wu, Jiaxin Yao, Zhaohao Zhang, Xiaohui Zhu, Guilei Wang, Junjie Li, Yongkui Zhang, Yuwei Cai, Renren Xu, Gaobo Xu, Qiuxia Xu, Huaxiang Yin, Jun Luo, Wenwu Wang, Tianchun Ye

“…A 16-nm-L_g p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. …”
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Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis by Suman Das, Yongju Zheng, Ayayi Ahyi, Marcelo A. Kuroda, Sarit Dhar

Subjects: “…4H-SiC MOSFET…”
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Analysis of Ruggedness of 4H-SiC Power MOSFETs with Various Doping Parameters by Min-Seok Jang, Jee-Hun Jeong, Ho-Jun Lee

Subjects: “…power MOSFET…”
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Optimization of technological parameters And Verification of Electrical Characteristics OF THE 0.35 μm MOSFET by T. T. Tran, V. R. Stempitsky, S. A. Soroka

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Physics-Informed Neural Network for High Frequency Noise Performance in Quasi-Ballistic MOSFETs by Jonghwan Lee

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Design and experiments of isolated gate driver using discrete devices for silicon carbide MOSFET by Dong Jiang, Hanxiang Wang, Ruodong Wang, Zicheng Liu, Yongjiang Liu, Zhenjun Lin, Weiwei Wan

“…This technology provides a novel solution for SiC MOSFET gate driver in HT environment.…”
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An Improved Investigation into the Effects of the Temperature-Dependent Parasitic Elements on the Losses of SiC MOSFETs by Yinong Zeng, Yingping Yi, Pu Liu

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Analysis of effects of MOSFET parasitic capacitance on non-synchronous buck converter electromagnetic emission by P. Rajeswari, V. Manikandan

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Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique by Toufik Bentrcia, Fayçal Djeffal, Elasaad Chebaki

Subjects: “…nanoscale DG MOSFET devices…”
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Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed by Yangjie Ou, Zhong Lan, Xiarong Hu, Dong Liu

Subjects: “…SiC MOSFET…”
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The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters by Maximilian W. Feil, Andreas Huerner, Katja Puschkarsky, Christian Schleich, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger, Tibor Grasser

“…Due to its high critical breakdown field and high thermal conductance, silicon carbide MOSFET devices are predestined for high-power applications. …”
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150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers by Feng-Tso Chien, Zhi-Zhe Wang, Cheng-Li Lin, Tsung-Kuei Kang, Chii-Wen Chen, Hsien-Chin Chiu

Subjects: “…split-gate trench power MOSFET…”
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Threshold Voltage Degradation for n-Channel 4H-SiC Power MOSFETs by Esteban Guevara, Victor Herrera-Pérez, Cristian Rocha, Katherine Guerrero

Subjects: “…silicon carbide mosfet…”
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A Uni-gate vertical power MOSFET with improved figure of Merits: Design and analysis by Hafsa Nigar, Hend I. Alkhammash, Shamimul. Qamar, Sajad A Loan

Subjects: “…Power MOSFET…”
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Experimental Study on Critical Parameters Degradation of Nano PDSOI MOSFET under TDDB Stress by Tianzhi Gao, Jianye Yang, Hongxia Liu, Yong Lu, Changjun Liu

“…With the continuous integration of transistors, the characteristic size of MOSFETs is shrinking. Time-dependent dielectric electrical breakdown (TDDB) is still a key reliability problem of MOSFETs in recent years. …”
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Layout Strengthening the ESD Performance for High-Voltage N-Channel Lateral Diffused MOSFETs by Sheng-Kai Fan, Shen-Li Chen, Po-Lin Lin, Hung-Wei Chen

Subjects: “…n-channel lateral diffused MOSFET (nLDMOS)…”
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Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests by Fabio Principato, Giuseppe Allegra, Corrado Cappello, Olivier Crepel, Nicola Nicosia, Salvatore D′Arrigo, Vincenzo Cantarella, Alessandro Di Mauro, Leonardo Abbene, Marcello Mirabello, Francesco Pintacuda

“…High temperature reverse-bias (HTRB), High temperature gate-bias (HTGB) tests and electrical DC characterization were performed on planar-SiC power MOSFETs which survived to accelerated neutron irradiation tests carried out at ChipIr-ISIS (Didcot, UK) facility, with terrestrial neutrons. …”
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Parallel arrangement of MOSFETs, effective suppression of crosstalk: A new gate driver topology by Jinpeng Wu

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